(4-phenylthiophenyl).diphenylsulfonium perfluoro-n-octanesulfonate | 338445-30-0

• 分子结构分类: 有机化合物 - 有机硫化合物 - 硫醚类
• 英文名称: (4-phenylthiophenyl).diphenylsulfonium perfluoro-n-octanesulfonate
• 英文别名: Diphenyl-(4-phenylsulfanylphenyl)sulfanium;1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctane-1-sulfonate
• CAS: 338445-30-0
• 化学式: C₈F₁₇O₃S*C₂₄H₁₉S₂
• 分子量: 870.672
• InChiKey: NNUBYFSQHLDHEQ-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  11.43
• 重原子数：
  55
• 可旋转键数：
  11
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.25
• 拓扑面积：
  91.9
• 氢给体数：
  0
• 氢受体数：
  21

文献信息

• Novel anthracene derivative and radiation-sensitive resin composition
  申请人：——

  公开号：US20030194634A1

  公开（公告）日：2003-10-16

  A novel anthracene derivative useful as an additive to a radiation-sensitive resin composition is disclosed. The anthracene derivative has the following formula (1), 1 wherein R 1 groups individually represent a hydroxyl group or a monovalent organic group having 1-20 carbon atoms, n is an integer of 0-9, X is a single bond or a divalent organic group having 1-12 carbon atoms, and R 2 represents a monovalent acid-dissociable group. The radiation-sensitive resin composition comprises the anthracene derivative of the formula (1), a resin insoluble or scarcely soluble in alkali, but becomes alkali soluble in the presence of an acid, and a photoacid generator. The composition is useful as a chemically-amplified resist for microfabrication utilizing deep ultraviolet rays, typified by a KrF excimer laser and ArF excimer laser.

  揭示了一种作为辐射敏感树脂组合物添加剂有用的新型蒽衍生物。该蒽衍生物具有以下化学式（1），其中R1基分别表示一个羟基或具有1-20个碳原子的一价有机基团，n是0-9的整数，X是一个单键或具有1-12个碳原子的二价有机基团，R2表示一价酸可解离基团。辐射敏感树脂组合物包括化学式（1）的蒽衍生物，一种在碱性条件下不溶或几乎不溶但在存在酸时变为碱溶的树脂，以及光酸发生剂。该组合物可用作化学放大光刻胶，用于利用KrF准分子激光和ArF准分子激光等深紫外线进行微加工。
• Radiation-sensitive resin composition
  申请人：JSR Corporation

  公开号：EP1253470A2

  公开（公告）日：2002-10-30

  A radiation-sensitive resin composition comprising (A) a compound of the following formula (1), (R1, R2, and R3 is hydrogen, hydroxyl group, or monovalent organic group and R4 is monovalent acid-dissociable group), (B) an alkali insoluble or scarcely soluble resin comprising a recurring unit of the following formula (2), (R5 is hydrogen or monovalent organic group, R' hydrogen or methyl, n 1-3, m 0-3) and a recurring unit containing acid-dissociable group, and (C) a photoacid generator. The resin composition is useful as a chemically amplified resist, exhibits high sensitivity, resolution, radiation transmittance, and surface smoothness, and is free from the problem of partial insolublization during overexposure.

  一种辐射敏感树脂组合物，包括(A)下式(1)的化合物、 (R1、R2 和 R3 为氢、羟基或一价有机基团，R4 为一价酸解离基团），（B）碱不溶性或难溶性树脂，包括下式（2）的循环单元、 (R5 为氢或一价有机基团，R' 为氢或甲基，n 1-3，m 0-3)和含有酸可分解基团的循环单元，以及 (C) 光酸发生器。该树脂组合物可用作化学放大抗蚀剂，具有高灵敏度、高分辨率、高辐射透过率和表面平滑度，并且不会在过度曝光时出现部分不溶解的问题。
• VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS
  申请人：JSR Corporation

  公开号：EP1231205A1

  公开（公告）日：2002-08-14

  Vinylphenylpropionic acid derivatives; processes for producing the derivatives; polymers of the same; and radiosensitive resin compositions containing the polymers. The above polymers exhibit low radiation absorption and are useful as the resin component of radiosensitive resin compositions particularly suitable for chemically amplified resists. For example, t-butyl 4-vinylphenylpropionate is produced by (1) reacting t-butyl bromoacetate with tri(n-butyl)phosphine to obtain a quaternary phosphonium salt, (2) reacting this salt with a base to obtain a phosphorus ylide, (3) reacting this ylide with 2,4,6-tris(3',5'-di-t-butyl-4'-hydroxybenzyl)methyl-styrene to obtain a quaternary phosphonium salt, and (4) hydrolyzing this salt.

  乙烯基苯丙酸衍生物；生产该衍生物的工艺；该衍生物的聚合物；以及含有该聚合物的辐射敏感树脂组合物。上述聚合物的辐射吸收率低，可用作辐射敏感树脂组合物的树脂成分，尤其适用于化学放大抗蚀剂。例如，4-乙烯基苯基丙酸叔丁酯是通过以下方法制得的：(1) 将溴乙酸叔丁酯与三(正丁基)膦反应，得到季鏻盐、(2) 将这种盐与碱反应，得到一种磷酰亚胺； (3) 将这种酰亚胺与 2,4,6-三（3',5'-二-叔丁基-4'-羟基苄基）甲基苯乙烯反应，得到一种季鏻盐； (4) 将这种盐水解。
• US6830868B2
  申请人：——

  公开号：US6830868B2

  公开（公告）日：2004-12-14
• US6770780B1
  申请人：——

  公开号：US6770780B1

  公开（公告）日：2004-08-03