2-hydroxy-N,N,N-trimethylanilinium ion | 68059-83-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2-hydroxy-N,N,N-trimethylanilinium ion
• 英文别名: 2-Hydroxy-phenyl-trimethyl-ammonium；NoName_916；(2-hydroxyphenyl)-trimethylazanium
• CAS: 68059-83-6
• 化学式: C₉H₁₄NO
• 分子量: 152.216
• InChiKey: VDAMZFHTCKFXBJ-UHFFFAOYSA-O

计算性质

• 辛醇/水分配系数(LogP)：
  1.5
• 重原子数：
  11
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.33
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  2-hydroxy-N,N,N-trimethylanilinium ion 以 水 为溶剂， 生成 2-羟基-N,N,N-三甲基苯铵
  参考文献：
  名称：

  邻近的电荷效应。4.在2-羟基-N，N，N-三甲基苯铵离子和3-羟基-N-甲基吡啶鎓离子去质子反应中反应热和反应物及产物的溶剂转移焓

  摘要：

  DOI：

  10.1021/j100231a028
• 作为产物：
  描述：

  2-(benzoyloxy)-N,N,N-trimethylanilinium iodide 在 sodium chloride 、 sodium hydroxide 作用下， 以 水 为溶剂， 生成 2-hydroxy-N,N,N-trimethylanilinium ion 、 苯甲酸
  参考文献：
  名称：

  中性和带电取代基对DMSO中苯甲酸烷基酯和苯甲酸烷基酯中红外羰基拉伸频率的影响

  摘要：

  57个间位，对位和邻位取代的苯甲酸酯C 6 H 5 CO 2 C 6 H 4- X和烷基苯甲酸酯C 6 H 5 CO 2 R的羰基红外拉伸频率，除中性取代基外，还包含带电荷的取代基记录了二甲基亚砜（DMSO）中的苯氧基和烷氧基部分。羰基伸缩频率，ν CO，为元-和对发现在中性取代基的情况下，苯甲酸的预取代苯基酯与取代基常数σ °很好地相关。在ν CO为值邻衍生物与感应取代基常数相关，σ我只。常数的电荷取代基的值，σ ° ±，所述的基础上计算ν CO和13角C NMR化学位移，δ CO，在DMSO中与吻合σ ° ±由Hoefnagel和Wepster报告的相应离子对的最大电离值，以及从50°C下4.4 M NaCl溶液中碱性水解的log k值确定的值。因此，在带电取代基未完全电离且处于离子对中的情况下，基于水性数据估算的带电荷取代基离子对的取代基常数值可以成功地用于非水溶液（DMSO）和中性取代基形成。版权所有©2016

  DOI：

  10.1002/poc.3608

文献信息

• CATALYZED POLYMERIZATION OF CYCLIC ESTERS AND CYCLIC CARBONATES
  申请人：Dubois Philippe Ghilain

  公开号：US20150126703A1

  公开（公告）日：2015-05-07

  A process for the preparation of polyesters or polycarbonates including (i) the provision of cyclic esters or cyclic carbonates, (ii) polymerizing by ring-opening in the presence of a betaine based metal-free catalyst showing formula − X—R 1 —Y + (R 2 ) 3 wherein X is S, O or Se, Y is N or P, R 1 is linear or cyclic alkyl or aryl, and R 2 is linear or cyclic alkyl. and under polymerizing conditions in the presence of an alcohol or amine based initiator.
• PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20160041465A1

  公开（公告）日：2016-02-11

  The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
• RESIST PATTERN-FORMING METHOD
  申请人：JSR CORPORATION

  公开号：US20170075224A1

  公开（公告）日：2017-03-16

  A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).
• US4517005A
  申请人：——

  公开号：US4517005A

  公开（公告）日：1985-05-14
• US9651863B2
  申请人：——

  公开号：US9651863B2

  公开（公告）日：2017-05-16