Diphenyl-methyl-<4-hydroxy-phenyl>-phosphoniumjodid | 20650-57-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: Diphenyl-methyl-<4-hydroxy-phenyl>-phosphoniumjodid
• 英文别名: (4-Hydroxyphenyl)-methyl-diphenylphosphanium;iodide
• CAS: 20650-57-1
• 化学式: C₁₉H₁₈OP*I
• 分子量: 420.23
• InChiKey: QNMADLCYGVFWOT-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.32
• 重原子数：
  22
• 可旋转键数：
  3
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.05
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  2

文献信息

• Doping of a substrate via a dopant containing polymer film
  申请人：THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

  公开号：US10340144B2

  公开（公告）日：2019-07-02

  Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.

  本文公开了一种掺杂衬底的方法，包括在衬底上涂布一层由共聚物、掺杂剂前体和溶剂组成的组合物；其中共聚物在溶液中能够相分离并嵌入掺杂剂前体；以及在750至1300℃的温度下将衬底退火0.1秒至24小时，使掺杂剂扩散到衬底中。本文还公开了一种半导体衬底，该衬底包括直径为 3 至 30 纳米的嵌入式掺杂畴；其中畴包括 13 族或 15 族原子，嵌入式球形畴位于衬底表面 30 纳米范围内。
• A process for reacting an epoxy resin or a thioepoxide with a polyhydric phenol, a polyhydric thiophenol, a carboxylic acid or a carboxylic acid anhydride
  申请人：THE DOW CHEMICAL COMPANY

  公开号：EP0132789B1

  公开（公告）日：1987-12-09
• DOPING OF A SUBSTRATE VIA A DOPANT CONTAINING POLYMER FILM
  申请人：THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

  公开号：US20170194150A1

  公开（公告）日：2017-07-06

  Disclosed herein is a method for doping a substrate, comprising disposing a coating of a composition comprising a copolymer, a dopant precursor and a solvent on a substrate; where the copolymer is capable of phase segregating and embedding the dopant precursor while in solution; and annealing the substrate at a temperature of 750 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate. Disclosed herein too is a semiconductor substrate comprising embedded dopant domains of diameter 3 to 30 nanometers; where the domains comprise Group 13 or Group 15 atoms, wherein the embedded spherical domains are located within 30 nanometers of the substrate surface.
• US4540823A
  申请人：——

  公开号：US4540823A

  公开（公告）日：1985-09-10
• US9576799B2
  申请人：——

  公开号：US9576799B2

  公开（公告）日：2017-02-21