PROTECTIVE FILM FORMING COMPOSITION HAVING AN ACETAL STRUCTURE
申请人:NISSAN CHEMICAL CORPORATION
公开号:US20200409260A1
公开(公告)日:2020-12-31
A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one acetal structure in a molecule thereof, and forms a protective film exhibiting excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.
PROTECTIVE FILM-FORMING COMPOSITION HAVING ACETAL STRUCTURE AND AMIDE STRUCTURE
申请人:NISSAN CHEMICAL CORPORATION
公开号:US20220026806A1
公开(公告)日:2022-01-27
A composition for forming a protective film having excellent resistance to a wet etching solution for semiconductors during a lithographic process in the manufacture of semiconductors; a method of forming a resist pattern using said protective film; and a method for manufacturing a semiconductor device. This composition for forming a protective film against a wet etching solution for semiconductors includes: a compound or polymer which contains at least one among an acetal structure and an amide structure; and a solvent. The polymer is preferably a copolymer of: a compound (a) containing at least one acetal structure in a molecule; and a compound (b) containing at least one amide structure in a molecule.