Aluminium--tungsten (4/1) | 12253-55-3

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: Aluminium--tungsten (4/1)
• 英文别名: alumane;tungsten
• CAS: 12253-55-3
• 化学式: Al₄W
• 分子量: 291.776
• InChiKey: XYGIKJIGRCCLKT-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -4.74
• 重原子数：
  5
• 可旋转键数：
  0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为反应物：
  描述：

  Aluminium--tungsten (4/1) 在 NaOH 作用下， 生成 钨
  参考文献：
  名称：

  Woehler, F.; Michel, F. R., Liebigs Annalen der Chemie, 1860, vol. 115, p. 102

  摘要：

  DOI：
• 作为产物：
  描述：

  氢化铝 、 钨 以 melt 为溶剂， 生成 Aluminium--tungsten (4/1)
  参考文献：
  名称：

  Preparation of W–Al intermetallic compound powders by a mechanochemical approach

  摘要：

  A series of W-Al intermetallic compound powders were synthesized by a novel mechanochemical approach, i.e., solid-liquid reaction ball milling. The XRD analysis showed that the Al12W, Al5W and Al4W intermetallic compound powders were successfully prepared at 953, 1023 and 1163 K, respectively. These fine powders have the average particle size of about 100 nm. Moreover, the solid-liquid reaction mechanism during the milling process was discussed. (c) 2007 Elsevier B.V. All rights reserved.

  DOI：

  10.1016/j.jallcom.2007.07.058

文献信息

• Synthesis of Al4C3 nanowalls via thermal evaporation and potential application in vacuum microelectronic devices as cold electron emitters
  作者：Y. Sun、H. Cui、L. Gong、J. Chen、C. X. Wang

  DOI：10.1039/c2ce25705j

  日期：——

  Ceramic Al4C3 nanowalls were fabricated through a VS mechanism via a chemical vapor deposition (CVD) method. XRD (X-ray diffraction), Raman spectra, SEM (scanning electron micrograph) and TEM (transmission electron micrograph) methods were employed to characterize the product. The synthesized 2-D nanostructures are confirmed to be polycrystalline R-Al4C3 with a Al2O3 sheath outside the nanosheet. Field emission (FE) measurements show that the turn-on field (where the emission current reaches 10 μA cm−2) of the as-prepared sample is 6.0–7.0 V μm−1. According to several comparative experiments, we propose an atmosphere-controlled nanowall growth mechanism from self-assembling templates under a low-pressure environment to explain the growth process.

  通过化学气相沉积（CVD）方法，采用 VS 机制制备了 Al4C3 纳米陶瓷壁。采用 XRD（X 射线衍射）、拉曼光谱、SEM（扫描电子显微镜）和 TEM（透射电子显微镜）方法对产品进行了表征。合成的二维纳米结构被证实为多晶 R-Al4C3，纳米片外有 Al2O3 护套。场发射（FE）测量结果表明，所制备样品的开启场（发射电流达到 10 μA cm-2）为 6.0-7.0 V μm-1。根据多项对比实验，我们提出了一种在低压环境下由自组装模板产生的大气控制纳米壁生长机制，以解释其生长过程。
• Guillet, L., Bulletin de la Societe d'Encouragement pour l'Industrie Nationale, 1902, vol. II, p. 230
  作者：Guillet, L.

  DOI：——

  日期：——
• Gmelin Handbuch der Anorganischen Chemie, Gmelin Handbook: W: MVol., 1.3.2, page 100 - 106
  作者：

  DOI：——

  日期：——
• Synthesis and thermal stability of Al75W25 alloy obtained by mechanically alloying
  作者：C.J. Zhu、X.F. Ma、W. Zhao、H.G. Tang、J.M. Yan、S.G. Cai

  DOI：10.1016/j.jallcom.2004.08.094

  日期：2005.5

  Al75W25 nanocrystalline alloy is synthesized by mechanically alloying the pure metal powder mixtures. The decrease of fee Al peaks from XRD patterns as a function of milling time suggests the formation of an extended W(Al) solid solution, even though no significant change of the bee lattice parameter is observed. The supersaturated solid solution is stable at 700 degrees C in vacuum, and the formation of Al4W intermetallic compound occurs when the MA-ed powders are annealed at 900 degrees C. After TG analysis, we find that the oxidation resistance of Al75W25 alloy is much improved compared with metal W, may be due to the passivity of Al. (c) 2004 Elsevier B.V. All rights reserved.
• Crystal structure and high-pressure studies of WAl2, an aluminide crystallizing with the CrSi2 structure type
  作者：Q.F. Gu、D.Y. Jung、G. Krauss、W. Steurer

  DOI：10.1016/j.jssc.2008.06.053

  日期：2008.10

  The novel intermetallic compound WAl2 crystallizes with space group PG422 and lattice parameters a = 4.7422(1)angstrom, c = 6.6057(2)angstrom. The crystal structure was solved from single-crystal X-ray diffraction data. WAl2 was found to be the first aluminide that is isotypic with CrSi2. A high-pressure powder X-ray diffraction study showed its stability up to at least 31.5(1) GPa. The bulk modulus was calculated by fitting a third-order Birch-Murnaghan equation of state to the pressure-volume data as K0 = 168(11) GPa and its pressure derivative K' = 7.7(1.0). Partially covalent bonding between W and Al atoms was indicated by means of the electron localization function (ELF) and explains the anisotropic compression behavior. Quantum chemical calculations identify WAl2 as a potential high-temperature phase. (c) 2008 Elsevier Inc. All rights reserved.