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1-azapentacene-6,13-quinone | 1256375-25-3

中文名称
——
中文别名
——
英文名称
1-azapentacene-6,13-quinone
英文别名
——
1-azapentacene-6,13-quinone化学式
CAS
1256375-25-3
化学式
C21H11NO2
mdl
——
分子量
309.324
InChiKey
IKQVKOVUDMWQGN-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    4.16
  • 重原子数:
    24.0
  • 可旋转键数:
    0.0
  • 环数:
    5.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    47.03
  • 氢给体数:
    0.0
  • 氢受体数:
    3.0

反应信息

  • 作为反应物:
    描述:
    1-azapentacene-6,13-quinone三异丙基硅基乙炔正丁基锂 作用下, 以 四氢呋喃正己烷 为溶剂, 反应 4.67h, 以31 mg的产率得到6,13-bis(triisoprpylsilylethynyl)-1-azapentacene
    参考文献:
    名称:
    High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences
    摘要:
    We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, 1 having mu(h) and mu(e) of 0.11 and 0.15 cm(2)/V.s and 3 having mu(h) and mu(e) of 0.08 and 0.09 cm(2)/V.s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors.
    DOI:
    10.1021/ja107046s
  • 作为产物:
    描述:
    2,3-bis(dibromomethyl)pyridine1,4-蒽醌 在 sodium iodide 作用下, 以 N,N-二甲基甲酰胺 为溶剂, 反应 24.0h, 以45%的产率得到1-azapentacene-6,13-quinone
    参考文献:
    名称:
    High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences
    摘要:
    We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, 1 having mu(h) and mu(e) of 0.11 and 0.15 cm(2)/V.s and 3 having mu(h) and mu(e) of 0.08 and 0.09 cm(2)/V.s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors.
    DOI:
    10.1021/ja107046s
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