[2]anthryl-[2]naphthyl-amine | 114863-23-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 蒽
• 英文名称: [2]anthryl-[2]naphthyl-amine
• 英文别名: N-naphthalen-2-ylanthracen-2-amine
• CAS: 114863-23-9
• 化学式: C₂₄H₁₇N
• 分子量: 319.406
• InChiKey: SHDGGDZHKNVUDK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  7.2
• 重原子数：
  25
• 可旋转键数：
  2
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  12
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  [2]anthryl-[2]naphthyl-amine 在 三氯化砷 作用下， 生成 16-chloro-7,16-dihydro-benzo[a]naphtho[2,3-j]phenarsazine
  参考文献：
  名称：

  Buu-Hoi et al., Journal of the Chemical Society, 1958, p. 4308,4310

  摘要：

  DOI：

文献信息

• Composition for forming a resist upper-layer film and method for producing a semiconductor device using the composition
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10042258B2

  公开（公告）日：2018-08-07

  This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.

  这种用于形成极紫外（EUV）或电子束上层抗蚀剂薄膜的组合物包括（a）聚合物（P）和（b）溶剂，溶剂中的C4-12酮化合物占整个溶剂的1-13质量％，用于半导体设备制造过程中的光刻工艺。这种用于形成 EUV 或电子束上层抗蚀剂薄膜的组合物无需与抗蚀剂混合，尤其是在进行 EUV 曝光时，可阻挡不希望的曝光光（例如紫外线 (UV) 或深紫外线 (DUV)），并选择性地只透射 EUV 射线，曝光后可使用显影液进行显影。
• PHOTOELECTRIC ELEMENT AND IMAGING DEVICE AND DRIVING METHODS THEREFOR
  申请人：Nomura Kimiatsu

  公开号：US20120298846A1

  公开（公告）日：2012-11-29

  A photoelectric element includes a conductive layer, an organic photoelectric layer, a blocking layer and a transparent conductive layer, the organic photoelectric layer contains a p type organic photoelectric material having a glass transition temperature of 100° C. or higher and forms an amorphous layer, and the blocking layer contains a blocking material having a glass transition temperature of 140° C. or higher.
• COMPOSITION FOR FORMING A RESIST UPPER-LAYER FILM AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE COMPOSITION
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20170205711A1

  公开（公告）日：2017-07-20

  This composition for forming an extreme-ultraviolet (EUV) or electron-beam upper-layer resist film including (a) a polymer (P) and (b) a solvent, the solvent containing 1 to 13 mass % of a C4-12 ketone compound with respect to the entire solvent, is used in the lithography process of a procedure for manufacturing a semiconductor device. Without needing to be intermixed with a resist, and particularly on the occasion of EUV exposure, the composition for forming an EUV or electron-beam upper-layer resist film blocks undesirable exposure light, e.g., ultraviolet (UV) or deep ultraviolet (DUV) rays, and selectively transmits only the EUV rays, and can be developed using a developing solution after exposure.
• COATING LIQUID FOR RESIST PATTERN COATING
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20170293227A1

  公开（公告）日：2017-10-12

  There is provided a new coating liquid for resist pattern coating. A coating liquid for resist pattern coating comprising a component A that is a polymer including at least one hydroxy group or carboxy group; a component B that is a sulfonic acid of A-SO 3 H (where A is a linear or branched alkyl group or fluorinated alkyl group having a carbon atom number of 1 to 16, an aromatic group having at least one of the alkyl group or the fluorinated alkyl group as a substituent, or a C 4-16 alicyclic group optionally having a substituent); and a component C that is an organic solvent capable of dissolving the polymer and including ether or ketone compound of R 1 —O—R 2 and/or R 1 —C(═O)—R 2 (where R 1 is a linear, branched, or cyclic alkyl group or fluorinated alkyl group having a carbon atom number of 3 to 16; and R 2 is a linear, branched, or cyclic alkyl group or fluorinated alkyl group having a carbon atom number of 1 to 16), a method of forming a resist pattern using the coating liquid, and a method for forming a reverse pattern using the coating liquid.
• US9085537B2
  申请人：——

  公开号：US9085537B2

  公开（公告）日：2015-07-21