bis(4-t-butylphenyl)iodonium 4-trifluoromethylbenzenesulfonate | 335199-98-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: bis(4-t-butylphenyl)iodonium 4-trifluoromethylbenzenesulfonate
• 英文别名: Bis(4-tert-butylphenyl)iodanium;4-(trifluoromethyl)benzenesulfonate
• CAS: 335199-98-9
• 化学式: C₇H₄F₃O₃S*C₂₀H₂₆I
• 分子量: 618.499
• InChiKey: IBWLSQDQZDVNSS-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  4.02
• 重原子数：
  35
• 可旋转键数：
  4
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.33
• 拓扑面积：
  65.6
• 氢给体数：
  0
• 氢受体数：
  6

文献信息

• RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20160145231A1

  公开（公告）日：2016-05-26

  A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.

  描述了一种包含由通式（1）或（2）表示的化合物的光刻胶组合物，使用该组合物形成光刻胶图案的方法，用于该组合物的多酚化合物，以及可以由其衍生的醇化合物。
• OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20200262787A1

  公开（公告）日：2020-08-20

  The present invention provides an optical component forming composition comprising a tellurium-containing compound or a tellurium-containing resin.

  本发明提供了一种包括含碲化合物或含碲树脂的光学元件成型组合物。
• Novel anthracene derivative and radiation-sensitive resin composition
  申请人：——

  公开号：US20030194634A1

  公开（公告）日：2003-10-16

  A novel anthracene derivative useful as an additive to a radiation-sensitive resin composition is disclosed. The anthracene derivative has the following formula (1), 1 wherein R 1 groups individually represent a hydroxyl group or a monovalent organic group having 1-20 carbon atoms, n is an integer of 0-9, X is a single bond or a divalent organic group having 1-12 carbon atoms, and R 2 represents a monovalent acid-dissociable group. The radiation-sensitive resin composition comprises the anthracene derivative of the formula (1), a resin insoluble or scarcely soluble in alkali, but becomes alkali soluble in the presence of an acid, and a photoacid generator. The composition is useful as a chemically-amplified resist for microfabrication utilizing deep ultraviolet rays, typified by a KrF excimer laser and ArF excimer laser.

  揭示了一种作为辐射敏感树脂组合物添加剂有用的新型蒽衍生物。该蒽衍生物具有以下化学式（1），其中R1基分别表示一个羟基或具有1-20个碳原子的一价有机基团，n是0-9的整数，X是一个单键或具有1-12个碳原子的二价有机基团，R2表示一价酸可解离基团。辐射敏感树脂组合物包括化学式（1）的蒽衍生物，一种在碱性条件下不溶或几乎不溶但在存在酸时变为碱溶的树脂，以及光酸发生剂。该组合物可用作化学放大光刻胶，用于利用KrF准分子激光和ArF准分子激光等深紫外线进行微加工。
• Acid generator, sulfonic acid, sulfonic acid derivatives and radiation-sensitive resin composition
  申请人：——

  公开号：US20030113658A1

  公开（公告）日：2003-06-19

  A novel photoacid generator containing a structure of the following formula (I), 1 wherein R is a monovalent organic group with a fluorine content of 50 wt % or less, a nitro group, a cyano group, or a hydrogen atom, and Z 1 and Z 2 are individually a fluorine atom or a linear or branched perfluoroalkyl group having 1-10 carbon atoms, is provided. When used in a chemically amplified radiation-sensitive resin composition, the photoacid generator exhibits high transparency, comparatively high combustibility, and no bioaccumulation, and produces an acid exhibiting high acidity, high boiling point, moderately short diffusion length in the resist coating, and low dependency to mask pattern density.

  提供一种新型光酸发生剂，其含有以下式(I)的结构，其中R是一种具有50重量％或以下氟含量，硝基，氰基或氢原子的一价有机基团，Z1和Z2分别是氟原子或具有1-10个碳原子的线性或支链全氟烷基团。当用于化学增感辐射敏感树脂组成物中时，该光酸发生剂表现出高透明度，相对高的可燃性和无生物积累，并产生具有高酸度，高沸点，适度短的扩散长度在抗蚀涂层中，并且对掩模图案密度的依赖性低的酸。
• CROSSLINKING AGENT, NEGATIVE RESIST COMPOSITION, AND PATTERN FORMING METHOD USING THE NEGATIVE RESIST COMPOSITION
  申请人：Okuyama Kenichi

  公开号：US20120115084A1

  公开（公告）日：2012-05-10

  Disclosed are a negative resist composition which shows excellent sensitivity and resolution in pattern formation by exposure to electron beams or EUV, a novel crosslinking agent suitable for the resist composition, and a pattern forming method using the resist composition. The negative resist composition comprises: (A) a polyphenol compound comprising two or more phenolic hydroxyl groups in a molecule thereof and having a molecular weight of 300 to 3,000, (B) an acid generator which directly or indirectly produces acid by exposure to active energy rays having a wavelength of 248 nm or less, and (C) a crosslinking agent represented by the following chemical formula (1). (The symbols shown in the formula (1) are defined in the Description).

  本发明涉及一种负型光阻组合物，通过暴露于电子束或极紫外线下表现出优异的感光性和分辨率，以及适用于该光阻组合物的新型交联剂和使用该光阻组合物的图案形成方法。该负型光阻组合物包括：（A）一种聚酚化合物，其分子中包含两个或更多酚羟基，并且分子量为300至3,000，（B）一种酸发生剂，通过暴露于波长为248nm或更短的活性能量射线而直接或间接产生酸，以及（C）一种由以下化学式（1）表示的交联剂。（化学式（1）中所示的符号在说明中有定义）。