An abrasive liquid for CMP process characterized by comprising an abrasive material, an aqueous solvent and an addition agent, and containing abrasive particles having a particle diameter of 20 to 80 nm by 15 weight % or more on the basis of the weight of the abrasive liquid; and a method of polishing by using the abrasive liquid are appropriate for the processing of flattening the surface of a device wafer on which at least a silicon oxide film is formed, and take effect of being capable of stably performing superior abrasive properties such as flattening properties, low flaw properties and high washing properties, and then are the most appropriate for the processing of flattening the surface of a semiconductor device comprising a layer insulation film or an element separation film, a magnetic head and a substrate for a liquid crystal display in the semiconductor industry.
一种用于
CMP工艺的研磨液,其特征在于由研磨材料、
水性溶剂和添加剂组成,并含有颗粒直径为20至80纳米的研磨颗粒,其重量占研磨液重量的15%或以上;以及使用该研磨液进行抛光的方法,适用于至少形成了氧化
硅薄膜的器件晶片表面的平整处理,并能稳定地发挥优异的研磨性能,如平整性能、低缺陷性能和高清洗性能,因此最适用于半导体工业中包括层绝缘膜或元件分离膜、磁头和液晶显示器基板的半导体器件表面的平整处理。