The present invention relates to a novel bisimide compound useful as an acid generator for a chemically amplified resist composition used in manufacturing of semiconductor element and the like or a raw material for synthesizing heat resistant polymers, an acid generator and a resist composition using said compound and a method for pattern formation using said composition, and further relates to a synthetic n intermediate for a bisimide compound and a bis(N-hydroxy)phthalimide compound useful as an intermediate for a functional compound such as a heat resistant polymer or photosensitive material, and provides a bisimide compound shown by the general formula [1]:
(wherein R and A1 are as defined in claim 1.)
本发明涉及一种新型双
酰亚胺化合物,可用作用于制造半导体元件等的
化学放大抗蚀剂组合物的酸发生器或合成耐热聚合物的原料,还涉及使用所述化合物的酸发生器和抗蚀剂组合物以及使用所述组合物的图案形成方法、并进一步涉及一种双
亚胺化合物的合成 n 中间体和一种双(N-羟基)邻苯二甲
酰亚胺化合物,可用作耐热聚合物或感光材料等功能化合物的中间体,并提供了通式[1]所示的双
亚胺化合物:
(其中 R 和 A1 如权利要求 1 所定义)。