N-Phenylsulfonyloxymaleinimid | 31796-20-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: N-Phenylsulfonyloxymaleinimid
• 英文别名: (2,5-Dioxopyrrol-1-yl) benzenesulfonate
• CAS: 31796-20-0
• 化学式: C₁₀H₇NO₅S
• 分子量: 253.235
• InChiKey: PDNYVYRNSBBXNF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.7
• 重原子数：
  17
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  89.1
• 氢给体数：
  0
• 氢受体数：
  5

文献信息

• CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PATTERNED RESIST FILM, METHOD OF MANUFACTURING SUBSTRATE WITH TEMPLATE, METHOD OF MANUFACTURING PLATED ARTICLE, AND MERCAPTO COMPOUND
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：US20190121233A1

  公开（公告）日：2019-04-25

  A chemically amplified positive-type photosensitive resin composition capable of suppressing the occurrence of “footing” in which the width of the bottom (the side proximal to the surface of a support) becomes narrower than that of the top (the side proximal to the surface of a resist layer) in the nonresist portion; and the generation of development residue when a resist pattern serving as a template for a plated article is formed on a metal surface of a substrate using the photosensitive resin composition. A mercapto compound having a specific structure is included in the photosensitive resin composition, and includes an acid generator which generates acid upon exposure to an irradiated active ray or radiation, and a resin whose solubility in alkali increases under the action of acid.

  一种化学增感型正型光敏树脂组合物，能够抑制“足部”现象的发生，即底部（靠近支撑表面的一侧）的宽度变窄，小于顶部（靠近抗蚀层表面的一侧）的宽度，同时在使用该光敏树脂组合物在基板的金属表面上形成用作电镀物品模板的抗蚀图案时，能够减少残留物的产生。该光敏树脂组合物中包含一种具有特定结构的巯基化合物，其中包括一个酸发生剂，该酸发生剂在暴露于辐射活性光线或辐射时产生酸，以及一种树脂，在酸的作用下其在碱性溶液中的溶解度增加。
• CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, METHOD OF MANUFACTURING PATTERNED RESIST FILM, METHOD OF MANUFACTURING SUBSTRATE WITH TEMPLATE, METHOD OF MANUFACTURING PLATED ARTICLE, AND COMPOUND
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：US20200209739A1

  公开（公告）日：2020-07-02

  A chemically amplified photosensitive composition which forms a resist pattern whose cross-sectional shape is rectangular, and which has a wide depth of focus margin; a photosensitive dry film having a photosensitive layer made from the composition; a method of manufacturing a patterned-resist film using the composition; a method of manufacturing a substrate with a template using the composition; a method of manufacturing a plated article using the substrate with a template; and a novel compound. An acid diffusion suppressing agent having a specific structure is blended into the composition including an acid generator which generates acid upon exposure to an irradiated active ray or radiation.

  一种化学增感光敏组合物，形成一个截面形状为矩形的抗蚀图案，具有宽广的焦深度余量；一种具有由该组合物制成的感光层的感光干膜；使用该组合物制造图案抗蚀膜的方法；使用该组合物制造带有模板的基板的方法；使用带有模板的基板制造电镀物品的方法；以及一种新型化合物。酸扩散抑制剂与包括在暴露于辐射活性光线或辐射时生成酸的酸发生剂的组合物中混合，具有特定的结构。
• Positive photosensitive composition
  申请人：Kodama Kunihiko

  公开号：US20070003871A1

  公开（公告）日：2007-01-04

  A positive photosensitive composition comprises a compound capable of generating a specified sulfonic acid upon irradiation with one of an actinic ray and radiation and (B) a resin capable of decomposing under the action of an acid to increase the solubility in an alkali developer.

  一种正性光敏组合物包括一种化合物，该化合物能够在接受活性光线或辐射照射后产生一种指定的磺酸，并且（B）一种树脂，该树脂在酸作用下分解以增加在碱性显影剂中的溶解度。
• PHOTOSENSITIVE RESIN COMPOSITION, AND METHOD FOR ETCHING GLASS SUBSTRATE
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：EP3702387A1

  公开（公告）日：2020-09-02

  To provide a photosensitive resin composition capable of forming an etching mask having sufficient resistance to an etchant to be used for etching of a glass substrate, the mask being able to be peeled off by an organic solvent-based stripping liquid, and a method for etching a glass substrate, the method including forming an etching mask using the photosensitive resin composition. For formation of an etching mask at the time of etching a glass substrate, a photosensitive resin composition including a resin component (A) having an acid-dissociable dissolution-inhibiting group and whose solubility in alkali is increased by action of an acid, an acid generator (B) generating an acid by irradiation with radiation, a filler (C), and a plasticizer (D), or a photosensitive resin composition including a resin component (A1) having a phenolic hydroxyl group, a protective agent (A2) to give an acid-dissociable dissolution-inhibiting group by reacting with a phenolic hydroxyl group, the acid generator (B), the filler (C), and the plasticizer (D), is used.

  提供一种光敏树脂组合物，该组合物能够形成对蚀刻液具有足够耐受性的蚀刻掩膜，用于蚀刻玻璃基板，该掩膜能够被有机溶剂型剥离液剥离；还提供一种蚀刻玻璃基板的方法，该方法包括使用该光敏树脂组合物形成蚀刻掩膜。为了在蚀刻玻璃基板时形成蚀刻掩膜，光敏树脂组合物包括具有可酸解的溶解抑制基团且其在碱中的溶解度在酸的作用下会增加的树脂成分 (A)、通过辐射产生酸的酸发生器 (B)、填料 (C) 和光敏树脂组合物、填充剂 (C) 和增塑剂 (D)，或光敏树脂组合物，包括具有酚羟基的树脂成分 (A1)、通过与酚羟基、酸发生器 (B)、填充剂 (C) 和增塑剂 (D) 反应产生可酸解的溶解抑制基的保护剂 (A2)。
• Hydrogen barrier agent, hydrogen barrier film forming composition, hydrogen barrier film, method for producing hydrogen barrier film, and electronic element
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：US10023540B2

  公开（公告）日：2018-07-17

  To provide a hydrogen barrier agent capable of imparting hydrogen barrier performance to various materials; a hydrogen barrier film forming composition including the hydrogen barrier agent; a hydrogen barrier film including the hydrogen barrier agent; a method for producing a hydrogen barrier film, which uses the hydrogen barrier film forming composition; and an electronic element provided with the hydrogen barrier film. A compound having a specific structure including an imidazolyl group is used as the hydrogen barrier agent. Furthermore, the hydrogen barrier film forming composition is prepared by blending the above-mentioned hydrogen barrier agent into the base material component. In addition, the hydrogen barrier film is formed using the hydrogen barrier film forming composition.

  提供一种能使各种材料具有氢阻隔性能的氢阻隔剂；一种包括该氢阻隔剂的氢阻隔薄膜形成组合物；一种包括该氢阻隔剂的氢阻隔薄膜；一种使用该氢阻隔薄膜形成组合物生产氢阻隔薄膜的方法；以及一种带有该氢阻隔薄膜的电子元件。氢阻隔剂使用了一种具有特定结构的化合物，其中包括咪唑基团。此外，氢阻隔膜形成组合物是通过将上述氢阻隔剂与基础材料成分混合而制备的。此外，使用氢阻隔膜形成组合物形成氢阻隔膜。