2,6-Dialkyl[1,2-b:4,5-b′]dithiophenes were synthesized as novel solution-processible organic semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility of ca. 10−2 cm2 V−1 s−1 and Ion⁄Ioff of ca. 105.
研究人员合成了 2,6-二烷基[1,2-b:4,5-b′]二
噻吩,作为新型溶液可加工有机半导体。经 XRD 分析证实,通过旋涂法沉积在
硅/
二氧化硅基底上的有机半导体薄膜具有良好的有序结构。在环境条件下对器件进行的评估显示了典型的 p 沟道场效应晶体管响应,其场效应迁移率约为 10-2 cm2 V-1 s-1,离子⁄Ioff 约为 105。