bis(2-methyl-4-(n-hexyloxy)phenylsulfonyl)diazomethane | 532411-47-5

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: bis(2-methyl-4-(n-hexyloxy)phenylsulfonyl)diazomethane
• 英文别名: 1-[Diazo-(4-hexoxy-2-methylphenyl)sulfonylmethyl]sulfonyl-4-hexoxy-2-methylbenzene
• CAS: 532411-47-5
• 化学式: C₂₇H₃₈N₂O₆S₂
• 分子量: 550.741
• InChiKey: SRFRYCOTCQAUAM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  7.9
• 重原子数：
  37
• 可旋转键数：
  16
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.52
• 拓扑面积：
  106
• 氢给体数：
  0
• 氢受体数：
  7

反应信息

• 作为产物：
  描述：

  对甲苯磺酰叠氮 、 bis(4-n-hexyloxy-2-methylphenylsulfonyl)methane 在 盐酸 、 di-aza-bicycloundecene 作用下， 以 二氯甲烷 、 水 为溶剂， 以52%的产率得到bis(2-methyl-4-(n-hexyloxy)phenylsulfonyl)diazomethane
  参考文献：
  名称：

  Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process

  摘要：

  一种化学放大型光刻胶组合物包含一种化学放大型光酸发生剂，其化学式为（1），其中R为H或C1-4烷基或烷氧基，G为SO2或CO，R3为C1-10烷基或C6-14芳基，p为1或2，q为0或1，p+q=2，n为0或1，m为3至11，k为0至4。该组合物适用于微细加工，尤其是通过深紫外光刻技术，因为具有许多优点，包括提高分辨率和在显影后改善图案轮廓。

  公开号：

  US20030180653A1

文献信息

• Photoacid generators, chemically amplified resist compositions, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20070292768A1

  公开（公告）日：2007-12-20

  A photoacid generator has formula (1). A chemically amplified resist composition comprising the photoacid generator has advantages including a high resolution, focus latitude, long-term PED dimensional stability, and a satisfactory pattern profile shape. When the photoacid generator is combined with a resin having acid labile groups other than those of the acetal type, resolution and top loss are improved. The composition is suited for deep UV lithography.

  一种光酸发生剂的化学式为（1）。包括该光酸发生剂的化学增感抗蚀组合物具有诸如高分辨率、焦点宽度、长期PED尺寸稳定性和令人满意的图案轮廓形状等优点。当该光酸发生剂与具有除了缩醛类型以外的酸敏感基团的树脂结合时，可以改善分辨率和顶部损失。该组合物适用于深紫外光刻。
• Resist composition and patterning process
  申请人：Watanabe Satoshi

  公开号：US20100009299A1

  公开（公告）日：2010-01-14

  The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F 2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

  本发明涉及一种抗蚀组合物，例如用于在抗蚀物的基板侧边界面上提供优异图案轮廓的化学增感抗蚀组合物，除了在微细加工的光刻工艺中具有更高的分辨率外，特别是在采用KrF激光、ArF激光、F2激光、超短紫外光、电子束、X射线等作为曝光光源的光刻工艺中；以及利用该抗蚀组合物的图案化工艺。本发明提供一种化学增感抗蚀组合物，其包括一种或多种胺化合物或胺氧化合物（除了那些在芳香环的环结构中不含有胺或胺氧原子的氮原子的化合物），至少具有一个羧基，并且没有氢原子共价键结合到氮原子作为碱性中心。
• POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：NISHI Tsunehiro

  公开号：US20100062374A1

  公开（公告）日：2010-03-11

  A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R 1 is H, methyl or trifluoromethyl, X is a single bond or methylene, m is 1 or 2, and the hydroxyl group attaches to a secondary carbon atom. The composition is improved in resolution when processed by lithography.

  一种正性光刻胶组合物包括（A）在酸的作用下在碱性显影剂中变得可溶的树脂组分和（B）酸发生剂。树脂（A）是一种聚合物，包含由式（1）表示的非离去羟基的重复单元，其中R1为H、甲基或三氟甲基，X为单键或亚甲基，m为1或2，并且羟基连接到次级碳原子。当通过光刻工艺处理时，该组合物在分辨率方面得到改善。
• Novel photoacid generators, resist compositions, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20080085469A1

  公开（公告）日：2008-04-10

  Photoacid generators generate sulfonic acids of formula (1a) upon exposure to high-energy radiation. RC(═O)R 1 —COOCH(CF 3 )CF 2 SO 3 − H + (1a) R is hydroxyl, alkyl, aryl, hetero-aryl, alkoxy, aryloxy or hetero-aryloxy, R 1 is a divalent organic group which may have a heteroatom (O, N or S) containing substituent, or R 1 may form a cyclic structure with R. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

  光酸发生剂在高能辐射作用下生成式（1a）的磺酸。RC(═O)R1—COOCH(CF3)CF2SO3−H+(1a)中，R为羟基、烷基、芳基、杂芳基、烷氧基、芳氧基或杂芳氧基，R1为可能含有杂原子（O、N或S）取代基的二价有机基团，或R1可与R形成环状结构。这些光酸发生剂与树脂相容，可以控制酸的扩散，因此适用于化学增感抗蚀组合物中的使用。
• Fluoroalcohol preparation method, fluorinated monomer, polymer, resist composition and patterning process
  申请人：Hasegawa Koji

  公开号：US20070179309A1

  公开（公告）日：2007-08-02

  Fluoroalcohol compounds of formula (4) are prepared by reacting a fluorine compound of formula (1) with reducing agents or organometallic reagents of formulas (2) and (3) wherein R 1 is H or a monovalent C 1 -C 20 hydrocarbon group in which any —CH 2 — moiety may be replaced by —O— or —C(═O)—, R 2 is H or a monovalent C 1 -C 6 hydrocarbon group, R 3 and R 4 are H or a monovalent C 1 -C 8 hydrocarbon group, and M 1 is Li, Na, K, Mg, Zn, Al, B, or Si. From the fluoroalcohol compounds, fluorinated monomers can be produced in a simple and economic way, which are useful in producing polymers for the formulation of radiation-sensitive resist compositions.

  通过将化学式（1）的氟化合物与化学式（2）和（3）的还原剂或有机金属试剂反应制备化学式（4）的氟醇化合物，其中R1是H或一价的碳1-碳20烃基，其中任何一个—CH2—基团可能被—O—或—C(═O)—替代，R2是H或一价的碳1-碳6烃基，R3和R4是H或一价的碳1-碳8烃基，M1是Li、Na、K、Mg、Zn、Al、B或Si。通过这些氟醇化合物，可以简单经济地生产氟化单体，这些单体在制备用于辐射敏感抗蚀剂组合物的聚合物中非常有用。