2,4,6-Tricyclopropylbenzoesaeure | 41381-20-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2,4,6-Tricyclopropylbenzoesaeure
• 英文别名: 2,4,6-Tricyclopropylbenzoic acid
• CAS: 41381-20-8
• 化学式: C₁₆H₁₈O₂
• 分子量: 242.318
• InChiKey: CSOHTJSNRUYBAS-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.2
• 重原子数：
  18
• 可旋转键数：
  4
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.56
• 拓扑面积：
  37.3
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  1,3,5-tricyclopropylbenzene 在 溴 作用下， 生成 2,4,6-Tricyclopropylbenzoesaeure
  参考文献：
  名称：

  Kurtz,W. et al., Chemische Berichte, 1973, vol. 106, p. 525 - 548

  摘要：

  DOI：

文献信息

• POLYMER COMPOUND, NEGATIVE RESIST COMPOSITION, LAMINATE, PATTERNING PROCESS, AND COMPOUND
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3203319A1

  公开（公告）日：2017-08-09

  The present invention provides a polymer compound containing a repeating unit shown by the following general formula (1). There can be provided a polymer compound usable in a negative resist composition that can achieve high resolution of 50 nm or less and small LER and cause very few defects, a negative resist composition using the polymer compound, and a patterning process using the negative resist composition.

  本发明提供了一种含有以下通式（1）所示重复单元的聚合物化合物。本发明提供了一种可用于负型抗蚀剂组合物的聚合物化合物，该化合物可实现 50 nm 或更低的高分辨率和较小的 LER，并可造成极少的缺陷；还提供了一种使用该聚合物化合物的负型抗蚀剂组合物，以及一种使用该负型抗蚀剂组合物的图案化工艺。
• NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3081988B1

  公开（公告）日：2017-08-16
• MONOMER, POLYMER, NEGATIVE RESIST COMPOSITION, PHOTOMASK BLANK, AND RESIST PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3572876B1

  公开（公告）日：2021-04-14
• CHEMICALLY AMPLIFIED RESIST COMPOSITION, PHOTOMASK BLANK, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING POLYMER COMPOUND
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20220404701A1

  公开（公告）日：2022-12-22

  A chemically amplified resist composition contains (A) a polymer compound containing one or two or more kinds of repeating units, at least one kind of the repeating units is polymerized from a polymerizable monomer with not more than 1000 ppm of a residual oligomer in a form of dimer to hexamer. An object of the present invention is to provide: a chemically amplified resist composition capable of achieving favorable resolution, pattern profile, and line edge roughness, and simultaneously suppressing development-residue defect, which would otherwise cause mask defect; and a method for forming a resist pattern by using this composition.
• US9645493B2
  申请人：——

  公开号：US9645493B2

  公开（公告）日：2017-05-09