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5-[4-(2-acetoxyethyl)-phenyl]dibenzothiophenium iodide | 945617-67-4

中文名称
——
中文别名
——
英文名称
5-[4-(2-acetoxyethyl)-phenyl]dibenzothiophenium iodide
英文别名
5-[4-(2-Acetoxyethyl)phenyl]dibenzothiophenium iodide;2-(4-dibenzothiophen-5-ium-5-ylphenyl)ethyl acetate;iodide
5-[4-(2-acetoxyethyl)-phenyl]dibenzothiophenium iodide化学式
CAS
945617-67-4
化学式
C22H19O2S*I
mdl
——
分子量
474.362
InChiKey
KYTNUOGCVQHEQF-UHFFFAOYSA-M
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2.84
  • 重原子数:
    26
  • 可旋转键数:
    5
  • 环数:
    4.0
  • sp3杂化的碳原子比例:
    0.14
  • 拓扑面积:
    27.3
  • 氢给体数:
    0
  • 氢受体数:
    3

反应信息

  • 作为反应物:
    参考文献:
    名称:
    RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND
    摘要:
    一种抗性组合物包括(A)由以下公式(I)所代表的化合物:其中R1至R13中的每一个独立地代表氢原子或取代基,前提是R1至R13中至少有一个是含有醇羟基的取代基;Z代表单键或二价连接基团;X-代表含有质子受体功能基团的阴离子。
    公开号:
    US20090042124A1
  • 作为产物:
    参考文献:
    名称:
    RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND
    摘要:
    一种抗性组合物包括(A)由以下公式(I)所代表的化合物:其中R1至R13中的每一个独立地代表氢原子或取代基,前提是R1至R13中至少有一个是含有醇羟基的取代基;Z代表单键或二价连接基团;X-代表含有质子受体功能基团的阴离子。
    公开号:
    US20090042124A1
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文献信息

  • PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION
    申请人:Kawanishi Yasutomo
    公开号:US20080081288A1
    公开(公告)日:2008-04-03
    A photosensitive composition includes (A) a compound represented by the following formula (I): wherein R 1 to R 13 each independently represents a hydrogen atom or a substituent, Z represents a single bond or a divalent linking group, and X − represents an anion containing a proton acceptor functional group.
    一种光敏组合物包括(A) 由下式(I)所表示的化合物:其中R1至R13各自独立地表示氢原子或取代基,Z表示单键或二价连接基团,X-表示含有质子受体功能基团的阴离子。
  • RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY, OR EUV, AND PATTERN-FORMING METHOD USING THE SAME
    申请人:YAMASHITA Katsuhiro
    公开号:US20090047598A1
    公开(公告)日:2009-02-19
    A positive resist composition for electron beam, X-ray or EUV includes (A) a compound represented by the following formula (I), and (B) a resin capable of decomposing by the action of an acid to increase solubility in an alkali developing solution, which includes a repeating unit represented by the following formula (II) and a repeating unit represented by the following formula (III):
    一种适用于电子束、X射线或EUV的正性光阻组合物,包括(A)由以下式子(I)表示的化合物和(B)一种树脂,能够通过酸的作用分解以增加在碱性显影液中的可溶性,该树脂包括由以下式子(II)和以下式子(III)表示的重复单元:
  • Photosensitive composition, compound for use in the photosensitive composition, and pattern-forming method using the photosensitive composition
    申请人:FUJIFILM Corporation
    公开号:US07851130B2
    公开(公告)日:2010-12-14
    A photosensitive composition includes (A) a compound represented by the following formula (I): wherein R1 to R13 each independently represents a hydrogen atom or a substituent, Z represents a single bond or a divalent linking group, and X− represents an anion containing a proton acceptor functional group.
    一种光敏组合物包括(A) 由以下公式(I)表示的化合物:其中,R1至R13各自独立地代表氢原子或取代基,Z代表单键或二价连接基团,X-代表含有质子受体功能基团的阴离子。
  • Resist composition for electron beam, X-ray, or EUV, and pattern-forming method using the same
    申请人:Fujifilm Corporation
    公开号:US08084183B2
    公开(公告)日:2011-12-27
    A positive resist composition for electron beam, X-ray or EUV includes (A) a compound represented by the following formula (I), and (B) a resin capable of decomposing by the action of an acid to increase solubility in an alkali developing solution, which includes a repeating unit represented by the following formula (II) and a repeating unit represented by the following formula (III):
    一种用于电子束、X射线或EUV的正性光刻胶组合物包括(A)由以下公式(I)所代表的化合物,以及(B)一种能够通过酸的作用分解以增加在碱性显影液中的溶解度的树脂,该树脂包括由以下公式(II)所代表的重复单元和由以下公式(III)所代表的重复单元。
  • Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound
    申请人:Fujifilm Corporation
    公开号:US08110333B2
    公开(公告)日:2012-02-07
    A resist composition includes (A) a compound represented by the following formula (I): wherein each of R1 to R13 independently represents a hydrogen atom or a substituent, provided that at least one of R1 to R13 is a substituent containing an alcoholic hydroxyl group; Z represents a single bond or a divalent linking group; and X− represents an anion containing a proton acceptor functional group.
    一种抗蚀组合物包括(A)由以下式(I)表示的化合物:其中R1到R13中的每个独立表示氢原子或取代基,前提是R1到R13中至少有一个是含有醇羟基的取代基;Z表示单键或二价连接基;X-表示含有质子受体功能基团的阴离子。
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