4-tert-butylphenyldiphenylsulfonium 2,4,6-triisopropylbenzenesulfonate | 754191-59-8

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 4-tert-butylphenyldiphenylsulfonium 2,4,6-triisopropylbenzenesulfonate
• 英文别名: (4-Tert-butylphenyl)-diphenylsulfanium;2,4,6-tri(propan-2-yl)benzenesulfonate
• CAS: 754191-59-8
• 化学式: C₁₅H₂₃O₃S*C₂₂H₂₃S
• 分子量: 602.902
• InChiKey: OACAOEUVPTUTBA-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  10.04
• 重原子数：
  42
• 可旋转键数：
  7
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.35
• 拓扑面积：
  66.6
• 氢给体数：
  0
• 氢受体数：
  3

文献信息

• Resist composition and patterning process
  申请人：Watanabe Satoshi

  公开号：US20100009299A1

  公开（公告）日：2010-01-14

  The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F 2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

  本发明涉及一种抗蚀组合物，例如用于在抗蚀物的基板侧边界面上提供优异图案轮廓的化学增感抗蚀组合物，除了在微细加工的光刻工艺中具有更高的分辨率外，特别是在采用KrF激光、ArF激光、F2激光、超短紫外光、电子束、X射线等作为曝光光源的光刻工艺中；以及利用该抗蚀组合物的图案化工艺。本发明提供一种化学增感抗蚀组合物，其包括一种或多种胺化合物或胺氧化合物（除了那些在芳香环的环结构中不含有胺或胺氧原子的氮原子的化合物），至少具有一个羧基，并且没有氢原子共价键结合到氮原子作为碱性中心。
• Chemically amplified positive resist composition and patterning process
  申请人：Koitabashi Ryuji

  公开号：US20050233245A1

  公开（公告）日：2005-10-20

  A chemically amplified positive resist composition comprising a specific 2,4,6-triisopropylbenzenesulfonate compound as a photoacid generator, a polymer which changes its solubility in an alkaline developer under the action of acid, and a basic compound has a high sensitivity, a high contrast of dissolution of resist film, a high resolution, and good storage stability.

  一种化学增感型正性光刻胶组合物，包括一种特定的2,4,6-三异丙基苯磺酸盐化合物作为光酸发生剂，一种在酸的作用下改变其在碱性显影剂中的溶解性的聚合物，以及一种碱性化合物，具有高灵敏度、高对光刻胶膜的溶解度对比度、高分辨率和良好的储存稳定性。
• Photomask blank, resist pattern forming process, and photomask preparation process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2000851A1

  公开（公告）日：2008-12-10

  A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.

  一种光掩模坯料具有抗蚀膜，抗蚀膜由 (A) 碱性树脂、(B) 酸发生体和 (C) 碱性化合物组成。光刻胶膜还包括 (D) 聚合物，该聚合物由具有氟化烃基的侧链的重复单元组成，侧链包含一个与羟基键合的碳原子和与其键合的邻接碳原子，邻接碳原子上总共键合了至少两个氟原子。添加聚合物 (D) 可确保整个抗蚀剂薄膜均匀显影，从而形成具有高 CD 均匀性的抗蚀剂图案。
• Resist patterning process and manufacturing photo mask
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2146247A1

  公开（公告）日：2010-01-20

  There is disclosed a resist patterning process with a minimum line width of 65 nanometers or less may be formed by using a resist composition containing a polymer, as a base polymer of a chemically-amplified resist composition, composed of a styrene unit whose hydroxyl group is protected by an acid labile group, and an indene unit, and/or an acenaphthalene unit, wherein the polymer has the weight-average molecular weight of 4,000 to 7,000, and in particular, 4,500 to 5,500.One of the currently existing problems to be solved is the line edge roughness. To solve this problem by an acid-generator and a basic compound, there is a problem of the trade-off relationship with a resolution power. There can be provided a resist composition having a high resolution containing a base polymer such as hydroxystyrene that is protected by an acid labile group, a resist patterning process with a pattern rule of 65 nanometers or less having a reduced line edge roughness.

  本发明公开了一种抗蚀剂图案化工艺，其最小线宽为 65 纳米或更小，方法是使用一种抗蚀剂组合物，该抗蚀剂组合物含有一种聚合物，作为化学扩增抗蚀剂组合物的基体聚合物，该聚合物由苯乙烯单元（其羟基被一个耐酸基团保护）、茚单元和/或苊单元组成，其中该聚合物的重量平均分子量为 4,000 至 7,000，特别是 4,500 至 5,500。目前有待解决的问题之一是线边缘粗糙度。要通过酸性发生剂和碱性化合物来解决这个问题，就存在一个与分辨力的权衡关系问题。现在可以提供一种具有高分辨率的抗蚀剂组合物，它含有一种被酸性基团保护的碱聚合物（如羟基苯乙烯），这种抗蚀剂图案化工艺的图案规则为 65 纳米或更小，具有较低的线边缘粗糙度。
• PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS
  申请人：KOITABASHI Ryuji

  公开号：US20080305411A1

  公开（公告）日：2008-12-11

  A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.