Cobalt-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The cobalt-containing film forming compositions comprise silylamide-containing precursors, particularly Co[N(SiMe3)2]2(NMe2Et) and/or Co[N(SiMe3)2]2(NMeEt2).
本发明揭示了含
钴薄膜制备组合物、其制备方法以及它们用于蒸汽沉积薄膜的用途。这些含
钴薄膜制备组合物包括含
硅氨基的前体,特别是Co[N(SiMe3)2]2(NMe2Et)和/或Co[N(SiMe3)2]2(NMeEt2)。