申请人:Nissan Chemical Industries, Ltd.
公开号:EP1484645A1
公开(公告)日:2004-12-08
There is provided a composition for forming anti-reflective coating for use in a lithography process with irradiation light from F2 excimer laser (wavelength 157 nm) which has a high effect of inhibiting reflected light and causes no intermixing with resist layers, and an anti-reflective coating prepared from the composition, and a method of controlling attenuation coefficient of the anti-reflective coating.
Concretely, the composition is one containing a polymer compound containing halogen atom for forming anti-reflective coating for use in a lithographic process in manufacture of a semiconductor device. The polymer compound is one which halogen atom is introduced to a main chain thereof and/or a side chain bonded to the main chain. The attenuation coefficient can be controlled by changing the content of halogen atom in the solid content of the composition.
本发明提供了一种用于在光刻工艺中使用 F2 准分子激光(波长 157 nm)照射光形成抗反射涂层的组合物,该组合物对反射光具有很高的抑制效果,并且不会导致与抗蚀层的混合;还提供了一种由该组合物制备的抗反射涂层,以及一种控制抗反射涂层衰减系数的方法。
具体地说,该组合物是一种含有卤素原子的聚合物化合物的组合物,用于形成抗反射涂层,在制造半导体器件的光刻工艺中使用。该高分子化合物是在其主链和/或与主链结合的侧链中引入卤素原子的化合物。衰减系数可通过改变组合物固体成分中卤原子的含量来控制。