3,4-Isopropylidendioxy-thiophenol | 51678-26-3

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并间二氧杂环戊烯类
• 英文名称: 3,4-Isopropylidendioxy-thiophenol
• 英文别名: 2,2-dimethyl-benzo[1,3]dioxole-5-thiol；2,2-Dimethyl-1,3-benzodioxole-5-thiol
• CAS: 51678-26-3
• 化学式: C₉H₁₀O₂S
• 分子量: 182.243
• InChiKey: FKWABUHYNUDTMW-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.5
• 重原子数：
  12
• 可旋转键数：
  0
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.33
• 拓扑面积：
  19.5
• 氢给体数：
  1
• 氢受体数：
  3

文献信息

• PROTECTIVE FILM FORMING COMPOSITION HAVING AN ACETAL STRUCTURE
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20200409260A1

  公开（公告）日：2020-12-31

  A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one acetal structure in a molecule thereof, and forms a protective film exhibiting excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.
• PROTECTIVE FILM-FORMING COMPOSITION HAVING ACETAL STRUCTURE AND AMIDE STRUCTURE
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US20220026806A1

  公开（公告）日：2022-01-27

  A composition for forming a protective film having excellent resistance to a wet etching solution for semiconductors during a lithographic process in the manufacture of semiconductors; a method of forming a resist pattern using said protective film; and a method for manufacturing a semiconductor device. This composition for forming a protective film against a wet etching solution for semiconductors includes: a compound or polymer which contains at least one among an acetal structure and an amide structure; and a solvent. The polymer is preferably a copolymer of: a compound (a) containing at least one acetal structure in a molecule; and a compound (b) containing at least one amide structure in a molecule.