decamethylbenzhydrol | 132590-73-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: decamethylbenzhydrol
• 英文别名: 2,3,4,5,6,2',3',4',5',6'-Decamethyl-benzhydrol；Bis(2,3,4,5,6-pentamethylphenyl)methanol
• CAS: 132590-73-9
• 化学式: C₂₃H₃₂O
• 分子量: 324.506
• InChiKey: ZTBQJVPNHQBUEV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.4
• 重原子数：
  24
• 可旋转键数：
  2
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.48
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  decamethylbenzhydrol 在 硫酸 作用下， 生成 (2,3,4,5,6,2',3',4',5',6'-decamethyl-benzhydryl)-methyl ether
  参考文献：
  名称：

  Preparation and Properties of Substituted Benzhydryl Carbonium Ions

  摘要：

  DOI：

  10.1021/ja01612a018
• 作为产物：
  描述：

  甲酸乙酯 、 alkaline earth salt of/the/ methylsulfuric acid 在 乙醚 作用下， 生成 decamethylbenzhydrol
  参考文献：
  名称：

  Preparation and Properties of Substituted Benzhydryl Carbonium Ions

  摘要：

  DOI：

  10.1021/ja01612a018

文献信息

• CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND
  申请人：OSAKA UNIVERSITY

  公开号：EP3133444A1

  公开（公告）日：2017-02-22

  A chemically amplified resist material of the present invention is used in a process including: patternwise exposing a predetermined region of resist material film to ionizing radiation or nonionizing radiation; floodwise exposing the resist material film patternwise exposed to nonionizing radiation; baking the resist material film floodwise exposed; and developing resist material film to form a resist pattern, the chemically amplified resist material containing: (1) base component; and (2) a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure, wherein the component (2) contains, among (a) a radiation-sensitive acid-and-sensitizer generating agent, (b) a radiation-sensitive sensitizer generating agent, and (c) a radiation-sensitive acid generating agent: the components (a) and (b); the components (b) and (c); or all of the components (a) to (c), and wherein the component (b) contains a compound represented by formula (A).

  本发明的一种化学放大抗蚀剂材料用于一种工艺中，该工艺包括：将抗蚀剂材料薄膜的预定区域图案化暴露于电离辐射或非电离辐射中；将抗蚀剂材料薄膜图案化暴露于非电离辐射中；烘烤被图案化暴露的抗蚀剂材料薄膜；显影抗蚀剂材料薄膜以形成抗蚀剂图案，该化学放大抗蚀剂材料包含：(1)碱成分；和(2)能在曝光时生成辐射敏感敏化剂和酸的成分，其中成分(2)包含(a)辐射敏感酸和敏化剂生成剂，(b)辐射敏感敏化剂生成剂，和(c)辐射敏感酸生成剂：组分 (a) 和 (b)；组分 (b) 和 (c)；或组分 (a) 至 (c) 的全部，其中组分 (b) 包含式 (A) 所代表的化合物。
• Chemically amplified resist material and resist pattern-forming method
  申请人：JSR CORPORATION

  公开号：US10018911B2

  公开（公告）日：2018-07-10

  A chemically amplified resist material comprises a polymer component that is capable of being made soluble or insoluble in a developer solution by an action of an acid, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The radiation-sensitive acid-and-sensitizer generating agent or the radiation-sensitive acid generating agent included in the generative component comprises the first compound that is radiation-sensitive and second compound that is radiation-sensitive. The first compound includes a first onium cation and a first anion, and the second compound includes a second onium cation and a second anion that is different from the first anion. Each of an energy released upon reduction of the first onium cation to a radical and an energy released upon reduction of the second onium cation to a radical is less than 5.0 eV.

  一种化学放大抗蚀剂材料包括一种在酸的作用下能溶于或不溶于显影液的聚合物成分，以及一种在曝光时能产生辐射敏感敏化剂和酸的生成成分。生成组件中的辐射敏感性酸和敏化剂生成剂或辐射敏感性酸生成剂包括辐射敏感性第一化合物和辐射敏感性第二化合物。第一化合物包括第一鎓阳离子和第一阴离子，第二化合物包括第二鎓阳离子和不同于第一阴离子的第二阴离子。第一鎓阳离子还原成自由基时释放的能量和第二鎓阳离子还原成自由基时释放的能量均小于 5.0 eV。
• Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting
  申请人：TOKYO ELECTRON LIMITED

  公开号：US10025187B2

  公开（公告）日：2018-07-17

  A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).

  根据本发明，一种光敏化学放大型抗蚀剂材料用于两阶段曝光光刻工艺，它包含(1)可显影碱成分和(2)通过曝光产生光敏剂和酸的成分。在由(a)酸-光敏剂发生器、(b)光敏剂前体和(c)光酸发生器组成的三个组件中，上述组件只包含(a)组件、任意两个组件或(a)至(c)的所有组件。
• Conformational shift by mutual steric interactions between two multiarmed units
  作者：Naama Zuaretz、Oren Golan、Silvio Biali

  DOI：10.1021/jo00007a035

  日期：1991.3

  Decakis(bromomethyl)biphenyl (3) has been prepared by reaction of decamethylbiphenyl with Br2/CCl4 in the presence of tetrabutylammonium bromide as catalyst. The attempted synthesis of decakis(bromomethyl)benzophenone resulted only in bromopentakis(bromomethyl)benzene (8). X-ray diffraction of a single crystal of 3 shows that the preferred conformation of 3 is not the alternate ''up-down'' conformation observed for the parent hexakis(bromomethyl)benzene, but a conformation in which the up-down alternation of the CH2Br groups is disrupted at the meta-para position of each ring. MM(85) calculations on 3 indicate that some conformations with disrupted ''up-down'' alternation of the CH2Br groups are favored over the all-alternate up-down form. It is suggested that this conformational shift is the result of the mutual steric interactions between arms of different moieties, and that syn interactions between m- and p-CH2Br groups operate in order to avoid bromine contacts between ortho groups at different rings. The barrier for Ar-CH2Br rotation was estimated from dynamic NMR data as 12.5 kcal mol-1.