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(+/-)-2.6-Bis-hydroxymethyl-4-sek.-butyl-phenol | 56272-52-7

中文名称
——
中文别名
——
英文名称
(+/-)-2.6-Bis-hydroxymethyl-4-sek.-butyl-phenol
英文别名
4-sec-Butyl-2,6-bis-hydroxymethyl-phenol;(+/-)-2-Hydroxy-1.3-bis-hydroxymethyl-5-sek.-butyl-benzol;4-(Butan-2-yl)-2,6-bis(hydroxymethyl)phenol;4-butan-2-yl-2,6-bis(hydroxymethyl)phenol
(+/-)-2.6-Bis-hydroxymethyl-4-<i>sek</i>.-butyl-phenol化学式
CAS
56272-52-7
化学式
C12H18O3
mdl
——
分子量
210.273
InChiKey
PAZZDPKALWDQED-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    2
  • 重原子数:
    15
  • 可旋转键数:
    4
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.5
  • 拓扑面积:
    60.7
  • 氢给体数:
    3
  • 氢受体数:
    3

反应信息

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文献信息

  • SILOXANE-BASED RESIN COMPOSITION
    申请人:Suwa Mitsuhito
    公开号:US20100316953A1
    公开(公告)日:2010-12-16
    The present invention is a siloxane-based resin composition including a siloxane-based resin and an imidosilane compound having a specific structure. Moreover, the present invention is a siloxane-based resin composition including a siloxane-based resin which is a reactive product to be obtained by hydrolyzing an alkoxysilane compound and an imidosilane compound having a specific structure and then making the resulting hydrolysate undergo a condensation reaction. According to the present invention, it is possible to form a cured film excellent in adhesion.
    本发明是一种基于硅氧烷树脂组合物,包括一种基于硅氧烷树脂和一种具有特定结构的亚硅烷化合物。此外,本发明还是一种基于硅氧烷树脂组合物,包括一种基于硅氧烷树脂,该树脂是通过解烷氧基硅烷化合物和具有特定结构的亚硅烷化合物反应产生的反应产物,然后使所得到的解产物经历缩合反应而得到的。根据本发明,可以形成具有优异附着力的固化膜。
  • DEVELOPER FOR RECORDING MATERIALS
    申请人:Asahi Kasei Chemicals Corporation
    公开号:EP1637337A1
    公开(公告)日:2006-03-22
    A developer which contains a triphenolic compound (B) being a triphenolic compound (A) of the general formula (1) satisfying the requirements: (a) an OH group is present at one or more of 4- and 4'-positions of the left and right aromatic rings and (b) at least one of the substituents adjacent to at least one OH group on the left or right aromatic rings is hydrogen and which exhibits high sensitivity and image stability of images and less fog in non-image areas; and color forming materials and thermal recording materials made by using the same.
    一种含有三酚类化合物(B)的显影剂,该三酚类化合物(B)是通式(1)的三酚类化合物(A),满足以下要求:(a) 在左芳香环和右芳香环的 4- 位和 4'- 位中的一个或多个位置上有一个羟基;(b) 与左芳香环或右芳香环上的至少一个羟基相邻的取代基中至少有一个是氢,并且该显影剂具有高灵敏度和图像稳定性,非图像区域的雾气较少;以及使用该显影剂制成的色彩形成材料和热敏记录材料。
  • LAMINATED BODY INCLUDING NOVOLAC RESIN AS PEELING LAYER
    申请人:Nissan Chemical Corporation
    公开号:EP3706156A1
    公开(公告)日:2020-09-09
    There is provided a laminated body for separating an object to be processed by cutting or the like, or for processing, for example, polishing a back surface of a water, the laminated body comprising an intermediate layer that is disposed between a support and the object to be processed and peelably adheres to the support and the object to be processed, wherein the intermediate layer includes at least a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification, and a material and a method for separation without mechanical load. A laminated body for polishing a back surface of a wafer, the laminated body comprising an intermediate layer that is disposed between a support and a circuit surface of the wafer and peelably adheres to the support and the circuit surface, wherein the intermediate layer includes an adhesion layer in contact with the wafer and a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification. The light transmittance of the peeling layer at a wavelength range of 190 nm to 600 nm may be 1 to 90%. The modification caused by absorption of light may be photodecomposition of the novolac resin.
    提供了一种层压体,用于通过切割等方式分离待加工物体,或用于加工,例如,抛光的背面,层压体包括中间层,该中间层设置在支撑物和待加工物体之间,并可剥离地粘附在支撑物和待加工物体上、其中,中间层至少包括一个与支撑物接触的剥离层,剥离层含有一种树脂,可吸收通过支撑物入射的波长为 190 纳米至 600 纳米的光,从而产生改性效果,以及一种无需机械负荷即可分离的材料和方法。 一种用于抛光晶片背面的层压体,该层压体包括中间层,该中间层设置在晶片的支撑件和电路表面之间,并可剥离地粘附在支撑件和电路表面上,其中,中间层包括与晶片接触的粘附层和与支撑件接触的剥离层,剥离层包含一种树脂,该树脂可吸收通过支撑件入射的波长为 190 纳米至 600 纳米的光,从而产生改性效果。剥离层在 190 纳米至 600 纳米波长范围内的透光率可达 1%至 90%。光吸收引起的改性可能是树脂的光分解。
  • Photosensitive resin composition, photosensitive resin composition film, cured product, insulating film and multilayer wiring board
    申请人:Toray Industries, Inc.
    公开号:US10474031B2
    公开(公告)日:2019-11-12
    A photosensitive resin composition contains (a) a polyimide which has, at a terminal of the main chain, at least one group selected from the group consisting of a carboxyl group, a phenolic hydroxyl group, a sulfonic acid group and a thiol group, (b) a monomer, (c) a thermally crosslinkable compound, (d) a photopolymerization initiator and (e) a polymerization inhibitor, wherein the polymerization inhibitor (e) is a compound obtained by adding at least one hydroxyl group, alkoxy group, aryloxy group or aralkyloxy group to a naphthalene skeleton or an anthracene skeleton of a compound having a naphthalene skeleton or an anthracene skeleton.
    一种光敏树脂组合物含有(a)聚酰亚胺,其主链末端具有至少一个选自由羧基、羟基、磺酸基和醇基组成的基团;(b)单体;(c)热交联化合物、(d) 光聚合引发剂和 (e) 聚合抑制剂,其中聚合抑制剂 (e) 是通过在具有骨架或骨架的化合物的骨架或骨架上添加至少一个羟基、烷氧基、芳氧基或芳烷氧基而得到的化合物。
  • Resist underlayer film-forming composition containing naphthol aralkyl resin
    申请人:NISSAN CHEMICAL CORPORATION
    公开号:US11199775B2
    公开(公告)日:2021-12-14
    A resist underlayer film not undergoing intermixing with a resist layer, having high dry etching and heat resistance, exhibiting high temperature low mass loss, and exhibiting even stepped substrate coatability, includes a polymer containing a unit structure of the formula (1): The unit structure of formula (1) is a unit structure of the formula (2): A method for producing a semiconductor device, includes forming, on a semiconductor substrate, a resist underlayer film using a resist underlayer film-forming composition, forming a hard mask on the resist underlayer film, a resist film on the hard mask, a resist pattern by irradiation with light or an electron beam and development of the resist film, a pattern by etching the hard mask using the resist pattern, a pattern by etching the underlayer film using the patterned hard mask, and processing the substrate using the patterned resist underlayer film.
    一种抗蚀剂底层薄膜不与抗蚀剂层混合,具有较高的耐干蚀刻性和耐热性,表现出高温低质量损失,并表现出均匀的阶梯基底涂覆性,它包括一种含有式(1)单元结构的聚合物: 式(1)的单元结构是式(2)的单元结构: 一种生产半导体器件的方法,包括在半导体衬底上用抗蚀剂底层成膜组合物形成抗蚀剂底层膜,在抗蚀剂底层膜上形成硬掩膜,在硬掩膜上形成抗蚀剂膜,用光或电子束照射抗蚀剂膜并使其显影而形成抗蚀剂图案,用抗蚀剂图案蚀刻硬掩膜而形成图案,用形成图案的硬掩膜蚀刻底层膜而形成图案,以及用形成图案的抗蚀剂底层膜加工衬底。
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