iso-tetragermane | 14097-09-7

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 环氧化物
• 英文名称: iso-tetragermane
• 英文别名: i-Ge4H10
• CAS: 14097-09-7
• 化学式: Ge₄H₁₀
• 分子量: 300.439
• InChiKey: MNCIIKMELREZQR-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -4.2
• 重原子数：
  4.0
• 可旋转键数：
  0.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为反应物：
  描述：

  tin tetradeuteride 、 正四硅烷 、 iso-tetragermane 、 isotetrasilane 在 锗烷 、 氢气 作用下， 以 neat (no solvent) 为溶剂， 300.0 ℃ 、0.01 Pa 条件下， 生成
  参考文献：
  名称：

  Molecular Synthesis of High-Performance Near-IR Photodetectors with Independently Tunable Structural and Optical Properties Based on Si–Ge–Sn

  摘要：

  This Article describes the development of an optimized chemistry-based synthesis method, supported by a purpose-built reactor technology, to produce the next generation of Ge1-X-ySixSny materials on conventional Si(100) and Ge(100) platforms at gas-source molecular epitaxy conditions. Technologically relevant alloy compositions (1-5% Sn, 4-20% Si) are grown at ultralow temperatures (330-290 degrees C) using highly reactive tetragermane (Ge4H10), tetrasilane (Si4H10), and stannane (SnD4) hydride precursors, allowing the simultaneous increase of Si and Sn content (at a fixed Si/Sn ratio near 4) for the purpose of tuning the bandgap while maintaining lattice-matching to Ge. First principles thermochemistry studies were used to explain stability and reactivity differences between the Si/Ge hydride sources in terms of a complex interplay among the isomeric species, and provide guidance for optimizing process conditions. Collectively, this approach leads to unprecedented control over the substitutional incorporation of Sn into Si Ge and yields materials with superior quality suitable for transitioning to the device arena. We demonstrate that both intrinsic and doped Ge1-x-ySixSny layers can now be routinely produced with defect-free microstructure and viable thickness, allowing the fabrication of high-performance photodetectors on Ge(100). Highlights of these new devices include precisely adjustable absorption edges between 0.87 and 1.03 eV, low ideality factors close to unity, and state-of-the-art dark current densities for Ge-based materials. Our unequivocal realization of the "molecules to device" concept implies that GeSiSn alloys represent technologically viable semiconductors that now merit inclusion in the class of ubiquitous Si, Ge, and SiGe group IV systems.

  DOI：

  10.1021/ja309894c
• 作为产物：
  描述：

  二锗烷 以 neat (no solvent) 为溶剂， 生成 iso-tetragermane 、 germane
  参考文献：
  名称：

  Molecular Synthesis of High-Performance Near-IR Photodetectors with Independently Tunable Structural and Optical Properties Based on Si–Ge–Sn

  摘要：

  This Article describes the development of an optimized chemistry-based synthesis method, supported by a purpose-built reactor technology, to produce the next generation of Ge1-X-ySixSny materials on conventional Si(100) and Ge(100) platforms at gas-source molecular epitaxy conditions. Technologically relevant alloy compositions (1-5% Sn, 4-20% Si) are grown at ultralow temperatures (330-290 degrees C) using highly reactive tetragermane (Ge4H10), tetrasilane (Si4H10), and stannane (SnD4) hydride precursors, allowing the simultaneous increase of Si and Sn content (at a fixed Si/Sn ratio near 4) for the purpose of tuning the bandgap while maintaining lattice-matching to Ge. First principles thermochemistry studies were used to explain stability and reactivity differences between the Si/Ge hydride sources in terms of a complex interplay among the isomeric species, and provide guidance for optimizing process conditions. Collectively, this approach leads to unprecedented control over the substitutional incorporation of Sn into Si Ge and yields materials with superior quality suitable for transitioning to the device arena. We demonstrate that both intrinsic and doped Ge1-x-ySixSny layers can now be routinely produced with defect-free microstructure and viable thickness, allowing the fabrication of high-performance photodetectors on Ge(100). Highlights of these new devices include precisely adjustable absorption edges between 0.87 and 1.03 eV, low ideality factors close to unity, and state-of-the-art dark current densities for Ge-based materials. Our unequivocal realization of the "molecules to device" concept implies that GeSiSn alloys represent technologically viable semiconductors that now merit inclusion in the class of ubiquitous Si, Ge, and SiGe group IV systems.

  DOI：

  10.1021/ja309894c

文献信息

• Electric discharge reactions of silane and germane with some volatile group VI species
  作者：J. E. Drake、C. Riddle

  DOI：10.1039/j19700003134

  日期：——

  discharge on equimolar mixtures of the following hydrides: SiH4/H2S, SiH4/H2Se, GeH4/H2S, GeH4/H2Se, SiH4/GeH4/H2S, SiH4/GeH4/H2Se, SiH4/MeSH, and GeH4/MeSH, has been investigated. Analysis of the reaction products by 1H n.m.r. and mass spectroscopy indicates the formation of the previously known mixed and ternary hydrides: SiH3SH, (SiH3)2S, SiH3SeH, (SiH3)2Se, GeH3SH, (GeH3)2S, GeH3SeH, (GeH3)2Se,

  无声放电对以下氢化物的等摩尔混合物的作用：SiH 4 / H 2 S，SiH 4 / H 2 Se，GeH 4 / H 2 S，GeH 4 / H 2 Se，SiH 4 / GeH 4 / H已经研究了2 S，SiH 4 / GeH 4 / H 2 Se，SiH 4 / MeSH和GeH 4 / MeSH。通过1 H核磁共振和质谱分析反应产物表明形成了先前已知的混合和三元氢化物：SiH 3 SH，（SiH3） 2 S，SiH 3 SeH，（SiH 3） 2 Se，GeH 3 SH，（GeH 3） 2 S，GeH 3 SeH，（GeH 3） 2 Se，MeSSiH 3和MeSGeH 3。新化合物SiH 3 SGeH 3和SiH 3 SeGeH 3从三元混合物的放电中获得。
• Gmelin Handbuch der Anorganischen Chemie, Gmelin Handbook: S: SVol.4a/b, 1.3.10.2.1, page 269 - 269
  作者：

  DOI：——

  日期：——