anthracene-9-allyl ether | 125340-11-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 蒽
• 英文名称: anthracene-9-allyl ether
• 英文别名: 9-allyloxyanthracene；9-[(Prop-2-en-1-yl)oxy]anthracene；9-prop-2-enoxyanthracene
• CAS: 125340-11-6
• 化学式: C₁₇H₁₄O
• 分子量: 234.298
• InChiKey: JDFREOGVZJKXEV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.2
• 重原子数：
  18
• 可旋转键数：
  3
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.06
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为产物：
  描述：

  蒽酮 、 3-溴丙烯 以40%的产率得到
  参考文献：
  名称：

  MAJUMDAR, K. C.;CHATTOPADHYAY, S. K., INDIAN J. CHEM. B , 28,(1989) N, C. 514-515

  摘要：

  DOI：

文献信息

• Synthesis of 9-Anthryl Ethers from trans-9,10-Dihydro-9,10-dimethoxy­anthracene by Acid-Catalyzed Transetherification
  作者：Dae Chi、Keun Jang、Hee Shin

  DOI：10.1055/s-0028-1088073

  日期：2009.5

  Ar) to anthracene, anthryl ethers at the C9-position of anthracene were obtained as the major products when trans-9,10-dihydro-9,10-dimethoxyanthracene was reacted (10 minutes at 75 ˚C) with various alcohols. 9-Anthryl ethers with primary, secondary, cyclic alcohols, and polyethylene glycol (PEG) were isolated in 47-73% yields under optimized conditions. It is hoped that the devised method offers a

  在对蒽的亲电芳族加成反应（Ad E Ar）的研究中，当反式-9,10-二氢-9,10-二甲氧基蒽反应（10分钟）时，蒽C9位的蒽醚是主要产物。在75℃下）与各种酒精混合。在优化的条件下，以47-73％的收率分离出带有伯，仲，环状醇和聚乙二醇（PEG）的9-蒽醚。希望所设计的方法为通过将反式-9，10-二氢-9，10-二甲氧基蒽与各种醇进行酸催化的反式醚化提供一种新的合成路线来制备蒽醚。 互醚化-蒽醚-反式-9,10-二氢-9,10-二甲氧基蒽
• Organic polymer for anti-reflective coating layer and preparation thereof
  申请人：——

  公开号：US20010043992A1

  公开（公告）日：2001-11-22

  The present invention provides a polymer that can be used as an anti-refelctive coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm) or ArF (193 nm) lasers as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield of such semiconductor devices.

  本发明提供了一种可用作抗反射涂层（ARC）聚合物的聚合物，包括该聚合物的ARC组合物，制备该聚合物的方法以及使用该聚合物的方法。本发明的聚合物在亚微米光刻工艺中特别有用，例如使用KrF（248 nm）或ArF（193 nm）激光作为光源。本发明的聚合物包含一种色团，能够吸收亚微米光刻工艺中使用的波长的光。因此，本发明的ARC显著降低或防止光的反射和由衍射和/或反射光引起的CD变形问题。本发明的ARC还显著降低或消除了立体波效应和反射凹痕。因此，本发明的聚合物可用于生产适用于64M、256M、1G、4G和16G DRAM半导体器件制造的稳定超细图案。此外，本发明的ARC显著提高了这种半导体器件的生产产量。
• Majumdar, K. C.; Chattopadhyay, S. K., Indian Journal of Chemistry - Section B Organic and Medicinal Chemistry, 1989, vol. 28, # 1-11, p. 514 - 515
  作者：Majumdar, K. C.、Chattopadhyay, S. K.

  DOI：——

  日期：——
• MAJUMDAR, K. C.;CHATTOPADHYAY, S. K., INDIAN J. CHEM. B , 28,(1989) N, C. 514-515
  作者：MAJUMDAR, K. C.、CHATTOPADHYAY, S. K.

  DOI：——

  日期：——