CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
申请人:Carter K. Melvin
公开号:US20050090109A1
公开(公告)日:2005-04-28
The invention relates to chemical mechanical polishing of substrates using an abrasive and a fluid composition, wherein certain organosulfonic acid compounds are used as oxidizers, and particularly relates to a method of polishing substrates comprising copper, tungsten, titanium, and/or polysilicon using a chemical-mechanical polishing system comprising organosulfonic acids having an electrochemical oxidation potential greater than 0.2V as an oxidizer.
本发明涉及使用磨料和流体组合物对基底进行
化学机械抛光,其中使用某些有机
磺酸化合物作为氧化剂,特别是涉及一种使用
化学机械抛光系统对由
铜、
钨、
钛和/或多晶
硅组成的基底进行抛光的方法,该系统包含电
化学氧化电位大于 0.2V 的有机
磺酸作为氧化剂。