Polymerizable Fluoromonomer, Fluoropolymer, Resist Material, and Method of Pattern Formation
申请人:Komoriya Haruhiko
公开号:US20110244188A1
公开(公告)日:2011-10-06
Disclosed is a polymerizable fluoromonomer represented by the following general formula (1).
In the formula, R
1
represents a hydrogen atom, methyl group, fluorine atom, or trifluoromethyl group. n is an integer of 0 or 1, and m is that of from 1 to (3+n). R
2
and R
3
each independently represents a hydrogen atom or a protective group. A resist containing a fluoropolymer obtained by polymerizing or copolymerizing the monomer is suitable for use in microfabrication by immersion exposure or by a double patterning process based on immersion exposure.
Disclosed is a top coat composition for photoresist, which is characterized by containing a fluorinated polymer having a repeating unit represented by general formula (5).
In the formula, R
1
represents a hydrogen atom, a methyl group, a fluorine atom, or a trifluoromethyl group; n represents 0 or 1; m represents an integer of 1 to (3+n); and R
2
or R
3
represents a hydrogen atom or a protecting group. The top coat composition has a proper degree of solubility in a developing solution.
Disclosed is a top coat composition for photoresist, which is characterized by containing a fluorinated polymer having a repeating unit represented by general formula (5).
In the formula, R1 represents a hydrogen atom, a methyl group, a fluorine atom, or a trifluoromethyl group; n represents 0 or 1; m represents an integer of 1 to (3+n); and R2 or R3 represents a hydrogen atom or a protecting group. The top coat composition has a proper degree of solubility in a developing solution.
Polymerizable fluoromonomer, fluoropolymer, resist material, and method of pattern formation
申请人:Komoriya Haruhiko
公开号:US08716385B2
公开(公告)日:2014-05-06
Disclosed is a polymerizable fluoromonomer represented by the following general formula (1). In the formula, R1 represents a hydrogen atom, methyl group, fluorine atom, or trifluoromethyl group. n is an integer of 0 or 1, and m is that of from 1 to (3+n). R2 and R3 each independently represents a hydrogen atom or a protective group. A resist containing a fluoropolymer obtained by polymerizing or copolymerizing the monomer is suitable for use in microfabrication by immersion exposure or by a double patterning process based on immersion exposure.