dimethylanthradithiophene | 1019983-99-3

• 分子结构分类: 有机化合物 - 苯类化合物 - 蒽
• 英文名称: dimethylanthradithiophene
• 英文别名: 2,8-dimethylanthra[2,3-b:6,7-b']dithiophene；DMADT；2,8-Dimethylanthra[2,3-b:6,7-b']dithiophene (purified by sublimation)；7,17-dimethyl-6,16-dithiapentacyclo[11.7.0.03,11.05,9.015,19]icosa-1,3(11),4,7,9,12,14,17,19-nonaene
• CAS: 1019983-99-3
• 化学式: C₂₀H₁₄S₂
• 分子量: 318.463
• InChiKey: HPJACFAPBXKLQA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.9
• 重原子数：
  22
• 可旋转键数：
  0
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.1
• 拓扑面积：
  56.5
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  2,5-bis((5-methylthiophene-2-yl)methyl)terephthalaldehyde 在 polyphosphoric acid 作用下， 反应 0.5h， 以75%的产率得到dimethylanthradithiophene
  参考文献：
  名称：

  异构的合成，物理性质和场效应迁移率纯顺- /反-Anthradithiophene衍生品

  摘要：

  异构体纯的顺式- /反-2,8- dimethylanthradithiophene（DMADT） -异构体的是在五个步骤合成，并使用热重，X射线单晶分析，紫外-可见吸收，并且电化学测量表征。每种异构体在溶液中的物理性质略有不同，因此在固态下观察到更明显的差异。使用反异构体的场效应晶体管表现出比使用顺异构体的场效应晶体管高得多的性能。

  DOI：

  10.1021/ol301626u

文献信息

• Functionalized anthradithiophenes for organic field-effect transistors
  作者：Ming-Chou Chen、Choongik Kim、Sheng-Yu Chen、Yen-Ju Chiang、Ming-Che Chung、Antonio Facchetti、Tobin J. Marks

  DOI：10.1039/b715746k

  日期：——

  Two new semiconductors for organic thin-film transistors (OTFTs), diperfluorophenyl anthradithiophene (DFPADT) and dimethyl anthradithiophene (DMADT), have been synthesized and characterized. The first material exhibits ambipolar transport in OTFT devices with field-effect mobilities (μ) of 6 × 10−4 cm2 V−1 s−1 and 0.05 cm2 V−1 s−1 for electrons and holes, respectively. Therefore, diperfluorophenyl substitution was found to be effective to induce n-type transport. Dimethyl-substituted anthradithiophene (DMADT) was also synthesized for comparison and exhibited exclusively hole transport with carrier mobility of ∼0.1 cm2 V−1 s−1. Within this semiconductor family, OTFT carrier mobility values are strongly dependent on the semiconductor film growth conditions, substrate deposition temperatures, and gate dielectric surface treatment.

  合成并表征了两种新的有机薄膜晶体管（OTFT）的半导体材料，分别为双氟苯基蒽二硫醚（DFPADT）和二甲基蒽二硫醚（DMADT）。第一种材料在OTFT器件中表现出双极输运，电子和孔的场效应迁移率（μ）分别为6 × 10−4 cm2 V−1 s−1和0.05 cm2 V−1 s−1。因此，发现双氟苯基取代能够有效地诱导n型输运。二甲基取代的蒽二硫醚（DMADT）也进行了合成以作比较，结果仅表现出孔输运，载流子迁移率约为0.1 cm2 V−1 s−1。在这个半导体家族中，OTFT的载流子迁移率值强烈依赖于半导体薄膜的生长条件、基片沉积温度和栅极介电层的表面处理。
• Photoelectric conversion element, imaging element, optical sensor comprising a photoelectric conversion film containing a predetermined compound, and compound
  申请人：FUJIFILM Corporation

  公开号：US11171165B2

  公开（公告）日：2021-11-09

  The present invention provides a photoelectric conversion element including a photoelectric conversion film having a narrow half-width of absorption peak and an excellent photoelectric conversion efficiency, and an imaging element, an optical sensor, and a compound. The photoelectric conversion element according to the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).

  本发明提供了一种光电转换元件，包括具有窄吸收峰半宽和优异光电转换效率的光电转换薄膜，以及成像元件、光学传感器和化合物。根据本发明的光电转换元件依次包括导电薄膜、光电转换薄膜和透明导电薄膜，其中光电转换薄膜包含由式（1）表示的化合物。
• ELECTROLUMINESCENT THIOPHENE DERIVATIVES
  申请人：Lomox Limited

  公开号：EP2483367B1

  公开（公告）日：2015-09-16
• ISOTHIOINDIGO-BASED POLYMERS
  申请人：Wigglesworth Anthony James

  公开号：US20130193379A1

  公开（公告）日：2013-08-01

  A polymer of Formula (I) wherein Ar, Y, Z, R 3 , R 4 , k, m, x, and n are as described herein. The isothioindigo-based polymer may be used in a semiconducting layer of an electronic device.
• SEMICONDUCTOR COMPOSITION
  申请人：Wu Yiliang

  公开号：US20130140494A1

  公开（公告）日：2013-06-06

  A semiconductor composition for producing a semiconducting layer with consistently high mobility is disclosed. The semiconductor composition includes a diketopyrrolopyrrole-thiophene copolymer and a non-aromatic halogenated hydrocarbon solvent. The copolymer has a structure disclosed within. Preferably, the non-aromatic halogenated hydrocarbon solvent contains at least 2 carbon atoms and at least 3 halogen atoms.