Synthesis and characterization of four-membered gallium-arsenic ring compounds containing a bridging As(SiMe3)2 group: crystal structures of Ph2l and Ph2r
作者:William K. Holley、Richard L. Wells、Soheila Shafieezad、Andrew T. McPhail、Colin G. Pitt
DOI:10.1016/0022-328x(90)85445-5
日期:1990.1
The first organogallium four-membered ring compounds with arsenic, halogen mixed bridging to be characterized completely, Ph2 (X = Cl (1) and X = Br (2)) were prepared by the reaction of (Me3Si)3As (3) with Ph2GaCl and Ph2GaBr, respectively. X-ray crystallographic analyses show the compounds to be isostructural with each containing a non-planar Ga-As-Ga-X four membered ring. Isomorphous crystals of
第一有机镓四元与砷,卤素混合桥接环化合物被完全表征中,Ph 2(X =氯(1)和X = Br的(2)),通过(Me中反应制备3 Si)的3如(3)分别用Ph 2 GaCl和Ph 2 GaBr。X射线晶体学分析表明该化合物是同构的,每个化合物都含有一个非平面的Ga-As-Ga-X四元环。1和2的同构晶体属于单斜晶系,空间群P 2 1 / c(C 5 2ħ)中,用四个分子在尺寸上的单元电池:一个10.560(3), b 15.797(3), Ç 20.591(4)α,β92.17(2)°, V 3433(2)埃3为1,和一10.653(1), b 15.777(2), ç 20.517(2)埃,β91.97(1)°, V 3446(1)埃3为2。环的非平面性表现为卤素原子相对于各自的Ga-As-Ga'平面的位移为0.256Å( 1)和0.293Å( 2)。与总体C 2 v的偏差对称用于减轻以这
Preparation and chemistry of Me3SiCH2AsH2; Preparation of [Me3SiCH2(H)AsGaPh2]3, a trimeric mono(arsino)gallane containing a hydrogen bonded to arsenic. Isolation and X-ray crystal structure of (Me3SiCH2As)5
作者:Richard L. Wells、Chong-Yun Kwag、Andrew P. Purdy、Andrew T. Mcphail、Colin G. Pitt
DOI:10.1016/s0277-5387(00)80586-0
日期:1990.1
Me3SiCH2As(SiMe3)2 (V). The monosilylated arsine was not isolated when 1 equiv. of Me3SiCl was allowed to react with combined II and n-BuLi (1 : 1 mole ratio); rather, a mixture of II and V resulted. Attempted preparations of (Me3SiCH2AsGaPh)n, are described. The ring compound, VI, was prepared by reaction of I with a mixture of Me3SiCl and Mg in THF. The molecular structure of this cycloarsane was determined by single-crystal
摘要在-78°C下用LiA1H4还原Me3SiCH2AsCl2(I)得到Me3SiCH2 AsH2(II),并且II与Ph3Ga反应生成了[Me3SiCH2(H)AsGaPh2] 3(III),其特征在于进行了部分元素分析(C和H) ,1H NMR光谱和低温分子量测定。根据1 H NMR数据,通过II与Me3Ga的反应生成[Me3SiCH2(H)AsGaMe2] 3(IV)。但是,在允许H2,Me4Si,(Me3SiCH2As)5(VI)和未反应的(Me3SiCH2)3Ga与II反应后,只能鉴定出H2,Me4Si,(Me3SiCH2As)3(Ga)。2当量的反应 将Me 3 SiCl与II和n-BuLi的混合物(1∶2摩尔比)混合,得到Me 3 SiCH 2 As(SiMe 3)2(V)。当1当量时,未分离出单甲硅烷基化的rs。使得Me 3 SiCl与合并的II和n-BuLi(1:1摩尔比
Compounds containing gallium–silicon bonding: syntheses and X-ray crystal structures of bis-[2(dimethylaminomethyl)phenyl]-[tris(trimethylsilyl)silyl]gallium, Aryl2GaSi(SiMe3)3 and diphenyl-[tris(trimethylsilyl)silyl]gallium, Ph2GaSi(SiMe3)3 · THF
作者:Nigel L. Pickett、Oliver Just、Xiaohua Li、Donald G. Vanderveer、William S. Rees
DOI:10.1016/s0022-328x(98)01195-4
日期:1999.6
The preparation and characterization of two newcompounds with gallium–silicon interatomic interactions are described. The single crystal X-ray diffraction structure of bis-[(2-dimethylaminomethyl)phenyl]-[tris(trimethylsilyl)silyl]gallium, Aryl2GaSi(SiMe3)3 (Aryl=(2-dimethylaminomethyl)phenyl) (1) and diphenyl-[tris(trimethylsilyl)silyl]gallium tetrahydrofuranate, Ph2GaSi(SiMe3)3 · THF (2), are described