3,5-diisopropyl-4-methylphenol | 15269-17-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 3,5-diisopropyl-4-methylphenol
• 英文别名: 4-Methyl-3,5-di-isopropylphenol；4-Methyl-3,5-diisopropylphenol；4-methyl-3,5-di(propan-2-yl)phenol
• CAS: 15269-17-7
• 化学式: C₁₃H₂₀O
• 分子量: 192.301
• InChiKey: XIGWUCHSXAEESN-UHFFFAOYSA-N

物化性质

• 熔点：
  52.7 °C
• 沸点：
  288.4±9.0 °C(Predicted)
• 密度：
  0.941±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  4.2
• 重原子数：
  14
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.54
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  3,5-diisopropyl-4-methylphenol 、 异氰酸苯酯 在 Petroleum ether 作用下， 生成 phenyl-carbamic acid-(3,5-diisopropyl-4-methyl-phenyl ester)
  参考文献：
  名称：

  Phenyl Isocyanate Derivatives of Certain Alkylated Phenols. Melting Points and X-Ray Powder Diffraction Data

  摘要：

  DOI：

  10.1021/i560129a007
• 作为产物：
  描述：

  对甲酚 、 异丙醚 在 zinc(II) chloride 作用下， 生成 3,5-diisopropyl-4-methylphenol
  参考文献：
  名称：

  Alkylation of phenols

  摘要：

  公开号：

  US02291804A1

文献信息

• [EN] NOVEL SULFONAMIDE CARBOXAMIDE COMPOUNDS<br/>[FR] NOUVEAUX COMPOSÉS DE SULFONAMIDE CARBOXAMIDE
  申请人：INFLAZOME LTD

  公开号：WO2019008025A1

  公开（公告）日：2019-01-10

  The present invention relates to compounds of formula (I) wherein Q is selected from O or S; R1 is a non-aromatic heterocyclic group comprising at least one ring nitrogen atom, wherein R1 is attached to the sulfur atom of the sulfonylurea group by a ring carbon atom, and wherein R1 may optionally be substituted; and R2 is a cyclic group substituted at the α-position, wherein R2 may optionally be further substituted. The present invention further relates to salts, solvates and prodrugs of such compounds, to pharmaceutical compositions comprising such compounds, and to the use of such compounds in the treatment and prevention of medical disorders and diseases, most especially by the inhibition of NLRP3.

  本发明涉及式（I）的化合物，其中Q从O或S中选择；R1是一个非芳香杂环基团，包括至少一个环氮原子，其中R1通过一个环碳原子连接到磺酰脲基团的硫原子，并且R1可以选择性地被取代；R2是在α位被取代的环基团，其中R2也可以选择性地被进一步取代。本发明还涉及这些化合物的盐、溶剂合物和前药，包括这些化合物的药物组合物，以及利用这些化合物治疗和预防医学疾病和疾病的用途，尤其是通过抑制NLRP3。
• Positive resist composition, resist pattern forming process, and photomask blank
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US10416558B2

  公开（公告）日：2019-09-17

  A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of specific structure has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.

  一种正性抗蚀组合物包括一种聚合物，适应在酸的作用下分解以增加其在碱性显影剂中的溶解性，以及一种具有特定结构的砜化合物，具有高分辨率。当这种抗蚀组合物经过光刻处理时，可以形成具有最小LER的图案。
• PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM
  申请人：Enomoto Yuichiro

  公开号：US20120282548A1

  公开（公告）日：2012-11-08

  Provided is a pattern forming method comprising (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin capable of decreasing the solubility for an organic solvent-containing developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (D) a solvent, and (G) a compound having at least either one of a fluorine atom and a silicon atom and having basicity or being capable of increasing the basicity by the action of an acid.

  提供的是一种形成图案的方法，包括(i)使用光致或辐射敏感树脂组成物形成薄膜的步骤，(ii)曝光薄膜的步骤，以及(iii)使用有机溶剂含有的显影剂显影曝光后的薄膜的步骤，其中光致或辐射敏感树脂组成物包括(A)一种能够通过酸的作用降低有机溶剂含有的显影剂的溶解度的树脂，(B)一种能够在光致或辐射照射下生成酸的化合物，(D)一种溶剂，以及(G)一种具有氟原子和硅原子中的至少一种，并具有碱性或能够通过酸的作用增加碱性的化合物。
• ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION
  申请人：FUJIFILM CORPORATION

  公开号：US20150010855A1

  公开（公告）日：2015-01-08

  There is provided an actinic ray-sensitive or radiation-sensitive composition containing (α) a compound represented by the formula (αI) capable of generating an acid having a size of 200 Å 3 or more in volume and (β) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and the formula (αI) is defined as herein, and a resist film formed using the actinic ray-sensitive or radiation-sensitive composition, a resist-coated mask blanks coated with the resist film, a resist pattern forming method comprising exposing the resist film and developing the exposed film, a photomask obtained by exposing and developing the resist-coated mask blanks, a method for manufacturing an electronic device, comprising the resist pattern forming method and an electronic device manufactured by the manufacturing method of an electronic device.

  提供一种感光或辐射敏感的组合物，其中包含(α)一种化合物，其由公式(αI)表示，能够产生大小为200Å3或更大的体积的酸，以及(β)一种化合物，能够在受到光辐射或辐射时产生酸，公式(αI)的定义如本文所述。还提供了使用该感光或辐射敏感组合物形成的光阻膜，涂有光阻膜的光阻涂层掩模坯料，包括曝光光阻膜和显影曝光后膜的光阻图案形成方法，通过曝光和显影涂有光阻涂层的掩模坯料获得的光掩模，以及一种电子器件的制造方法，包括光阻图案形成方法和制造电子器件的电子器件制造方法，以及通过该电子器件制造方法制造的电子器件。
• Resist composition and resist patterning process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US11131926B2

  公开（公告）日：2021-09-28

  The present invention provides a resist composition, including: (A) a sulfonium salt containing an anion and a cation, the cation including a partial structure shown by the following general formula (A1); and (B) a polymer compound containing a repeating unit shown by the following general formula (B1). The present invention provides a resist composition that causes few defects and is excellent in lithography performance, having regulated acid diffusion, in photolithography using a high energy beam as a light source, and a resist patterning process using this resist composition.

  本发明提供了一种抗蚀剂组合物，包括：(A)含有阴离子和阳离子的锍盐，阳离子包括如下通式(A1)所示的部分结构；和(B)含有如下通式(B1)所示重复单元的聚合物化合物。本发明提供了一种抗蚀剂组合物，该抗蚀剂组合物在使用高能量光束作为光源进行光刻时几乎不会产生缺陷，并且光刻性能优异，具有调节酸扩散的功能，还提供了一种使用该抗蚀剂组合物的抗蚀剂图案化工艺。