triphenylsulfonium propionate | 342809-27-2

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: triphenylsulfonium propionate
• 英文别名: Triphenylsulfanium propanoate；propanoate;triphenylsulfanium
• CAS: 342809-27-2
• 化学式: C₃H₅O₂*C₁₈H₁₅S
• 分子量: 336.455
• InChiKey: BVLKECPAIWFGHO-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  3.93
• 重原子数：
  24
• 可旋转键数：
  3
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.1
• 拓扑面积：
  41.1
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  triphenylsulfonium propionate 、 对甲苯磺酸甲酯 以 乙腈 为溶剂， 以85%的产率得到triphenylsulfonium p-toluenesulfonate
  参考文献：
  名称：

  Process for producing onium salt derivative and novel onium salt derivative

  摘要：

  该发明提供了一种高产率的方法，用于生产盐衍生物，这些盐衍生物可用作在化学增强型光刻胶中使用的代理，例如酸发生剂；并提供了新颖的盐衍生物。含有卤根离子或羧酸根离子的盐衍生物与磺酸酯衍生物或磷酸衍生物的反应在高产率下提供盐硫酸盐衍生物或盐磷酸盐衍生物。

  公开号：

  US06620957B1

文献信息

• Method for producing onium salt derivatives, and novel onium salt derivatives
  申请人：Tomita Kyoichi

  公开号：US20050176982A1

  公开（公告）日：2005-08-11

  The invention provides a high-yield method for producing onium salt derivatives useful as agents, such as acid-generators, employed in chemically amplified resists; and to provide novel onium salt derivatives. Reaction of an onium salt derivative containing a halide anion or a carboxylate anion with a sulfonic acid ester derivative or a phosphoric acid derivative provides an onium sulfate derivative or an onium phosphate derivative at high yield.

  本发明提供了一种高产率的方法，用于生产有用于代理的酸发生剂，如化学增强型光刻胶中所用的离子盐衍生物；并提供新的离子盐衍生物。将含有卤素阴离子或羧酸盐离子的离子盐衍生物与磺酸酯衍生物或磷酸衍生物反应，可高产率地得到离子硫酸盐衍生物或离子磷酸盐衍生物。
• PROCESS FOR PRODUCING ONIUM SALT DERIVATIVE AND NOVEL ONIUM SALT DERIVATIVE
  申请人：Toyo Gosei Kogyo Co., Ltd.

  公开号：EP1164127A1

  公开（公告）日：2001-12-19

  The invention provides a high-yield method for producing onium salt derivatives useful as agents, such as acid-generators, employed in chemically amplified resists; and to provide novel onium salt derivatives. Reaction of an onium salt derivative containing a halide anion or a carboxylate anion with a sulfonic acid ester derivative or a phosphoric acid derivative provides an onium sulfate derivative or an onium phosphate derivative at high yield.

  本发明提供了一种生产鎓盐衍生物的高产方法，该衍生物可用作化学放大抗蚀剂中使用的制剂（如酸生成剂）；本发明还提供了新型鎓盐衍生物。将含有卤化阴离子或羧酸阴离子的鎓盐衍生物与磺酸酯衍生物或磷酸衍生物反应，可获得高产率的硫酸鎓衍生物或磷酸鎓衍生物。
• Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method
  申请人：Shinetsu Chemical Co., Ltd.

  公开号：EP1845132A2

  公开（公告）日：2007-10-17

  A silicon-containing film is formed from a heat curable composition comprising (A) a silicon-containing compound obtained by effecting hydrolytic condensation of a hydrolyzable silicon compound in the presence of an acid catalyst, and substantially removing the acid catalyst from the reaction mixture, (B) a hydroxide or organic acid salt of lithium, sodium, potassium, rubidium or cesium, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The silicon-containing film allows an overlying photoresist film to be patterned effectively. The composition is effective in minimizing the occurrence of pattern defects after lithography and is shelf stable.

  含硅薄膜由一种热固化组合物形成，该组合物包括：(A) 一种含硅化合物，该化合物是通过在酸催化剂存在下使一种可水解的硅化合物发生水解缩合，并从反应混合物中基本除去酸催化剂而获得；(B) 锂、钠、钾、铷或铯的氢氧化物或有机酸盐，或一种锍、碘或铵化合物；(C) 一种有机酸；以及 (D) 一种有机溶剂。含硅薄膜可以有效地将上覆的光刻胶薄膜图案化。该组合物能有效地减少光刻后图案缺陷的出现，并具有货架稳定性。
• Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning method
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2063319A1

  公开（公告）日：2009-05-27

  A metal oxide-containing film is formed from a heat curable composition comprising (A) a metal oxide-containing compound obtained through hydrolytic condensation between a hydrolyzable silicon compound and a hydrolyzable metal compound, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Cs, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The metal oxide-containing film ensures effective pattern formation.

  一种含金属氧化物的薄膜由一种热固化组合物形成，该组合物包括：(A) 通过可水解硅化合物和可水解金属化合物之间的水解缩合获得的含金属氧化物化合物；(B) Li、Na、K、Rb 或 Cs 的氢氧化物或有机酸盐，或锍、碘或铵化合物；(C) 有机酸；以及 (D) 有机溶剂。含金属氧化物的薄膜可确保有效的图案形成。
• Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2172807A1

  公开（公告）日：2010-04-07

  There is disclosed a thermosetting composition for forming a silicon-containing film to form a silicon-containing film formed in a multilayer resist process used in lithography, including at least (A) a silicon-containing compound obtained by hydrolyzing and condensing a hydrolyzable silicon compound using an acid as a catalyst, (B) a thermal crosslinking accelerator (C) a monovalent or bivalent or more organic acid having 1 to 30 carbon atoms, (D) trivalent or more alcohol and (E) an organic solvent. There can be provided a composition for a silicon-containing film which can form a good pattern in a photoresist film, can form a silicon-containing film for an etching mask having a good dry etching resistance, can give a good storage stability and can be delaminated with a solution used in a delamination process in a multilayer resist process used for lithography, a substrate on which the silicon-containing film is formed, and further a method for forming a pattern.

  本发明公开了一种用于形成含硅薄膜的热固性组合物，该组合物用于形成在光刻中使用的多层抗蚀剂工艺中形成的含硅薄膜，至少包括(A)通过使用酸作为催化剂水解和缩合可水解硅化合物而获得的含硅化合物，(B)热交联促进剂，(C)具有 1 至 30 个碳原子的一价或二价或更多有机酸，(D)三价或更多醇，以及(E)有机溶剂。本发明可以提供一种含硅薄膜的组合物，该组合物可以在光刻胶膜中形成良好的图案，可以形成用于蚀刻掩膜的含硅薄膜，该薄膜具有良好的耐干蚀刻性，可以提供良好的储存稳定性，并且可以用用于光刻的多层抗蚀剂工艺中的分层工艺中使用的溶液进行分层，还可以提供一种在其上形成含硅薄膜的基底，以及进一步提供一种形成图案的方法。