1,2-bis<(methylsulfonyl)oxy>benzene | 64931-04-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 1,2-bis<(methylsulfonyl)oxy>benzene
• 英文别名: catechol dimethanesulfonate；1,2-dimesyloxybenzene；1,2-bis-methanesulfonyloxy-benzene；Di-O-methansulfonyl-brenzcatechin；1,2-Bis-methansulfonyloxy-benzol；1,2-Dimethylsulfonyloxybenzol；(2-Methylsulfonyloxyphenyl) methanesulfonate
• CAS: 64931-04-0
• 化学式: C₈H₁₀O₆S₂
• 分子量: 266.296
• InChiKey: DUTKQZIXCWCJHV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1
• 重原子数：
  16
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.25
• 拓扑面积：
  104
• 氢给体数：
  0
• 氢受体数：
  6

反应信息

• 作为反应物：
  描述：

  1,2-bis<(methylsulfonyl)oxy>benzene 在 氢氧化钾 作用下， 以 甲醇 、 水 为溶剂， 生成 2-(mesyloxy)phenol
  参考文献：
  名称：

  FR2289514

  摘要：

  公开号：
• 作为产物：
  描述：

  邻苯二酚 、 甲基磺酰氯 在 三乙胺 作用下， 以 乙酸乙酯 为溶剂， 反应 0.17h， 以98%的产率得到1,2-bis<(methylsulfonyl)oxy>benzene
  参考文献：
  名称：

  Chromatography-Free and Eco-Friendly Synthesis of Aryl Tosylates and Mesylates

  摘要：

  Two chromatography-free and eco-friendly protocols have been developed to synthesize aryl tosylates and mesylates by the tosylation and mesylation of the corresponding hydroxyarenes, respectively. These protocols are superior to other known ones regarding the simplicity, reaction time and conditions, the range of substrates, yields, and environmental friendliness.

  DOI：

  10.1055/s-0034-1378867

文献信息

• [EN] CATECHOL O-METHYLTRANSFERASE ACTIVITY INHIBITING COMPOUNDS<br/>[FR] COMPOSÉS INHIBANT L'ACTIVITÉ DE LA CATÉCHOL O-MÉTHYLTRANSFÉRASE
  申请人：ORION CORP

  公开号：WO2013175053A1

  公开（公告）日：2013-11-28

  Compounds of formula (I), wherein R1 is as defined in the claims, exhibit COMT enzyme inhibiting activity and are thus useful as COMT inhibitors.

  式（I）中的化合物，其中R1如权利要求中定义的，具有COMT酶抑制活性，因此可用作COMT抑制剂。
• Composition for film formation and material for insulating film formation
  申请人：JSR CORPORATION

  公开号：US20020172652A1

  公开（公告）日：2002-11-21

  A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly (arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.

  一种用于制备薄膜的组合物，能够形成具有低介电常数特性、抗开裂性、弹性模量和对基底的附着力优异的涂层膜，并可用作半导体器件中的层间绝缘膜材料等。该制膜组合物包含（A）至少一种选自芳香族聚芳烃和芳香族聚（芳烃醚）的成员，（B）聚乙烯基硅氧烷和（C）有机溶剂。
• Pattern forming material and process for forming pattern using the same
  申请人：HITACHI, LTD.

  公开号：EP0388813A2

  公开（公告）日：1990-09-26

  A pattern can be formed on a substrated using a pattern forming material comprising (a) a medium, e.g. a polymer or compound, having reactivity for changing solubility in an alkali aqueous solution by a reaction using an acid as a catalyst, and (b) as an acid precursor an alkylsulfonic acid ester obtained from a compound having at least two phenolic hydroxyl groups.

  使用图案形成材料可在基底上形成图案，图案形成材料包括：(a)介质，例如聚合物或化合物，通过使用酸作为催化剂进行反应，具有改变在碱水溶液中溶解度的反应活性；(b)作为酸前体的烷基磺酸酯，该烷基磺酸酯从具有至少两个酚羟基的化合物中获得。
• LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM
  申请人：JSR Corporation

  公开号：EP1679184A1

  公开（公告）日：2006-07-12

  A laminate having a low relative dielectric constant and exhibiting excellent adhesion, a method of forming the laminate, an insulating film, a semiconductor device, and a film-forming composition are provided. A laminate according to the invention includes: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes a monovalent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming a laminate according to the invention includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including a monovalent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

  本发明提供了一种具有低相对介电常数并表现出优异附着力的层压板、一种形成该层压板的方法、一种绝缘膜、一种半导体器件和一种成膜组合物。 根据本发明的层压板包括：第一硅基薄膜；第二硅基薄膜；以及有机薄膜，其中第二硅基薄膜包括含有碳碳双键或碳碳三键的一价有机基团。 根据本发明形成层压板的方法包括：在基底上形成第一硅基薄膜的第一涂层；在第一涂层上形成第二硅基薄膜的第二涂层，第二涂层包括含有碳碳双键或碳碳三键的一价有机基团；在第二涂层上形成有机薄膜的第三涂层；以及固化包括第一至第三涂层的多层薄膜。
• INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM
  申请人：JSR Corporation

  公开号：EP1696478A1

  公开（公告）日：2006-08-30

  The invention provides a method of forming an insulating film which exhibits resistance against processing such as RIE used when forming a dual-damascene structure while maintaining a low relative dielectric constant of a polysiloxane insulating film. A polysiloxane insulating film is formed on a substrate by hydrolysis and condensation of a silane compound. A solution obtained by dissolving a polycarbosilane compound shown by the following general formula in a solvent is applied to the polysiloxane insulating film, and the resulting coating is heated to form a polycarbosilane insulating film. An organic insulating film is then formed on the polycarbosilane insulating film.

  本发明提供了一种形成绝缘膜的方法，这种绝缘膜既能抵抗在形成双大马士革结构时使用的 RIE 等加工，又能保持聚硅氧烷绝缘膜较低的相对介电常数。聚硅氧烷绝缘膜是通过硅烷化合物的水解和缩合作用在基材上形成的。将下表通式所示的聚碳硅烷化合物溶解在溶剂中得到的溶液涂抹在聚硅氧烷绝缘膜上，然后加热涂层，形成聚碳硅烷绝缘膜。 然后在聚碳硅烷绝缘膜上形成有机绝缘膜。