本文中,我们介绍了从t Bu 2 PNH 2(1)与Me反应获得的七元13/15基链化合物HB {N(H)P t Bu 2 BH 3 } 2(3)的合成和表征2 S·BH 3。此外,我们描述了铝和镓化合物t Bu 2 PN(H)Al t Bu 2 N(H)P(H)t Bu 2(4)和t Bu 2(H)PN(H)Ga t的合成由t Bu 2 PNH 2(1)与M t Bu 3(M = Al,Ga)反应生成的Bu 3(5)。
A practical method for N-alkylation of phosphinic (thio)amides with alcohols via transfer hydrogenation
作者:Tanner C. Jankins、Zi-Yang Qin、Keary M. Engle
DOI:10.1016/j.tet.2019.04.029
日期:2019.6
This manuscript describes a modular method for preparing N-alkyl phosphinicamidesfrom primary or secondary alcohols and primary phosphinic amide (R1R2P = ONH2) nucleophiles via transfer hydrogenation. The transformation typically proceeds in excellent yields, employs conveniently available reagents, and produces water as the only byproduct.
该手稿描述了通过转移氢化从伯或仲醇和伯次膦酰胺(R 1 R 2 P = ONH 2)亲核试剂制备N-烷基次膦酰胺的模块化方法。该转化通常以优异的收率进行,使用方便获得的试剂,并且产生水作为唯一的副产物。
[EN] ENANTIOMERICALLY ENRICHED AMINODIPHOSPHINES AS LIGANDS FOR THE PREPARATION OF CATALYSTS FOR ASYMMETRIC SYNTHESIS<br/>[FR] AMINODIPHOSPHINES ÉNANTIOMÉRIQUEMENT ENRICHIES COMME LIGANDS POUR LA PRÉPARATION DE CATALYSEURS POUR UNE SYNTHÈSE ASYMÉTRIQUE
申请人:ENANTIA S L
公开号:WO2011098160A1
公开(公告)日:2011-08-18
The present invention relates to enantiomerically enriched aminodiphosphine ligands where the chirality is located in the phosphorus atom and their preparation process, to catalysts containing them and their preparation process, as well as their use in asymmetric synthesis.
Enantiomerically Enriched Aminodiphosphines as Ligands for the Preparation of Catalysts for Asymmetric Synthesis
申请人:Alonso Xalma Mónica
公开号:US20120309997A1
公开(公告)日:2012-12-06
The present invention relates to enantiomerically enriched aminodiphosphine ligands where the chirality is located in the phosphorus atom and their preparation process, to catalysts containing them and their preparation process, as well as their use in asymmetric synthesis.
Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-<i>tert</i>-butylaminophosphane (DTBAP)
作者:Johannes Glowatzki、Oliver Maßmeyer、Marcel Köster、Thilo Hepp、Ebunoluwa Odofin、Carsten von Hänisch、Wolfgang Stolz、Kerstin Volz
DOI:10.1021/acs.organomet.0c00078
日期:2020.5.26
decomposition temperature of 310 °C and the realization of Ga(N,P) layers grown at temperatures as low as 475 °C with a high N incorporation of over 10%. Furthermore, the gas-phase decomposition of DTBAP has been studied with a real-time fast Fourier transform quadrupole ion trap mass spectrometer attached inline to the MOVPE reactor. The decomposition of DTBAP behaves very similarly to the As analogue