2,3-dimethyltetracene | 16218-42-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 并四苯
• 英文名称: 2,3-dimethyltetracene
• CAS: 16218-42-1
• 化学式: C₂₀H₁₆
• 分子量: 256.347
• InChiKey: OBUZJMJUAVMAHQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.6
• 重原子数：
  20
• 可旋转键数：
  0
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.1
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

反应信息

• 作为产物：
  描述：

  4,5-二甲基苯-1,2-二甲醇 在 lithium aluminium tetrahydride 、 氢溴酸 、 potassium iodide 作用下， 以 四氢呋喃 、 N,N-二甲基甲酰胺 为溶剂， 反应 52.0h， 生成 2,3-dimethyltetracene
  参考文献：
  名称：

  Organic Thin Film Transistors Based on 2,3-Dimethylpentacene and 2,3-Dimethyltetracene

  摘要：

  Abstract2,3‐Dimethylpentacene (DMP) and 2,3‐dimethyltetracene (DMT) were synthesized, characterized and employed as the channel material in the fabrication of thin‐film transistors. The two methyl groups increase the chemical stability of the compounds versus the pristine acene analogues. The crystals maintain herringbone‐like molecular packing, whereas the weak dipole associated with the unsymmetrical molecule induces an anti‐parallel alignment among the neighbors. This structural motif favors layered film growth on SiO2/Si surface. Thin film transistors prepared on SiO2/Si and n‐nonyltrichlorosilane‐modified SiO2/Si at different substrate temperatures were compared. DMP‐based transistors prepared on rubbed n‐nonyltrichlorosilane‐modified SiO2/Si substrate gave the highest field‐effect mobility of 0.46 cm2/Vs, whereas DMT‐based transistor gave a mobility of 0.028 cm2/Vs.

  DOI：

  10.1002/jccs.201200383

文献信息

• Organic Thin Film Transistors Based on 2,3-Dimethylpentacene and 2,3-Dimethyltetracene
  作者：Famil Valiyev、Chi-Wei Huang、Hwo-Shuenn Sheu、Yu-Tai Tao

  DOI：10.1002/jccs.201200383

  日期：2012.12

  Abstract2,3‐Dimethylpentacene (DMP) and 2,3‐dimethyltetracene (DMT) were synthesized, characterized and employed as the channel material in the fabrication of thin‐film transistors. The two methyl groups increase the chemical stability of the compounds versus the pristine acene analogues. The crystals maintain herringbone‐like molecular packing, whereas the weak dipole associated with the unsymmetrical molecule induces an anti‐parallel alignment among the neighbors. This structural motif favors layered film growth on SiO2/Si surface. Thin film transistors prepared on SiO2/Si and n‐nonyltrichlorosilane‐modified SiO2/Si at different substrate temperatures were compared. DMP‐based transistors prepared on rubbed n‐nonyltrichlorosilane‐modified SiO2/Si substrate gave the highest field‐effect mobility of 0.46 cm2/Vs, whereas DMT‐based transistor gave a mobility of 0.028 cm2/Vs.