Syntheses of dibenzo[<i>d</i>,<i>d</i>']benzo[2,1-<i>b</i>:3,4-<i>b</i>']difuran derivatives and their application to organic field-effect transistors
作者:Minh Anh Truong、Koji Nakano
DOI:10.3762/bjoc.12.79
日期:——
Ladder-type pi-conjugated compounds containing a benzo[2,1-b:3,4-b']difuran skeleton, such as dibenzo[d,d']benzo[2,1-b:3,4-b']difuran (syn-DBBDF) and dinaphtho[2,3-d:2',3'-d']benzo[2,1-b:3,4-b']difuran (syn-DNBDF) were synthesized. Their photophysical and electrochemical properties were revealed by UV-vis absorption and photoluminescence spectroscopy and cyclic voltammetry. Organic field-effect transistors
包含苯并[2,1-b:3,4-b']二呋喃骨架的阶梯型π-共轭化合物,例如二苯并[d,d']苯并[2,1-b:3,4-b'合成了]二呋喃(syn-DBBDF)和二萘并[2,3-d:2',3'-d']苯并[2,1-b:3,4-b']二呋喃(syn-DNBDF)。通过紫外可见吸收和光致发光光谱以及循环伏安法揭示了它们的光物理和电化学性质。用这些化合物作为有机半导体制造了有机场效应晶体管(OFET),并评估了它们的半导体性能。具有syn-DBBDF和syn-DNBDF的OFET表现出典型的p型特征,空穴迁移率分别为<1.5 x 10(-3)cm(2).V(-1).s(-1)和<1.0 x 10(-) 1)cm(2).V(-1).s(-1)。