5-methyl-2-(1-methyl-1-hydroxy-2,2,2-trifluoroethyl)furan | 136264-54-5

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 杂芳族化合物
• 英文名称: 5-methyl-2-(1-methyl-1-hydroxy-2,2,2-trifluoroethyl)furan
• 英文别名: 1,1,1-Trifluoro-2-(5-methylfuran-2-yl)propan-2-ol
• CAS: 136264-54-5
• 化学式: C₈H₉F₃O₂
• 分子量: 194.153
• InChiKey: VQKIPJVKSHQBFE-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.9
• 重原子数：
  13
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  33.4
• 氢给体数：
  1
• 氢受体数：
  5

反应信息

• 作为产物：
  描述：

  2-甲基呋喃 、 1,1,1-三氟丙酮 生成 5-methyl-2-(1-methyl-1-hydroxy-2,2,2-trifluoroethyl)furan
  参考文献：
  名称：

  GAVRILOVA, S. P.;GLUXOVTSEV, V. G.;NIKISHIN, G. I.;BADOVSKAYA, L. A.;KULN+, ZH. ORGAN. XIMII, 26,(1990) N1, S. 2416-2419

  摘要：

  DOI：

文献信息

• Gavrilova, S. P.; Glukhovtsev, V. G.; Nikishin, G. I., Journal of Organic Chemistry USSR (English Translation), 1990, vol. 26, # 11, p. 2087 - 2089
  作者：Gavrilova, S. P.、Glukhovtsev, V. G.、Nikishin, G. I.、Badovskaya, L. A.、Kul'nevich, V. G.

  DOI：——

  日期：——
• PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20160041465A1

  公开（公告）日：2016-02-11

  The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
• RESIST PATTERN-FORMING METHOD
  申请人：JSR CORPORATION

  公开号：US20170075224A1

  公开（公告）日：2017-03-16

  A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).
• US9651863B2
  申请人：——

  公开号：US9651863B2

  公开（公告）日：2017-05-16
• US9939729B2
  申请人：——

  公开号：US9939729B2

  公开（公告）日：2018-04-10