2-(3,4-Dimethylphenyl)-1,1,1-trifluoropropan-2-ol | 96661-21-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 2-(3,4-Dimethylphenyl)-1,1,1-trifluoropropan-2-ol
• CAS: 96661-21-1
• 化学式: C₁₁H₁₃F₃O
• 分子量: 218.219
• InChiKey: QWTSZIDEHNCPGV-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.1
• 重原子数：
  15
• 可旋转键数：
  1
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.45
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  2-(3,4-Dimethylphenyl)-1,1,1-trifluoropropan-2-ol 在 三溴化磷 作用下， 反应 4.0h， 生成 4-(1-Bromo-2,2,2-trifluoro-1-methyl-ethyl)-1,2-dimethyl-benzene
  参考文献：
  名称：

  替代效应。十九。1-Aryl-1-(trifluoromethyl)ethyl Tosylates 的溶剂分解

  摘要：

  1-芳基-1-（三氟甲基）乙基甲苯磺酸酯的溶剂分解速率在 80% 乙醇水溶液中测定一系列取代基。Brown ρ+σ+ 处理未能给出简单的线性图，但所有 p-π-供体都从元相关线向上偏离。另一方面，Yukawa-Tsuno LArSR Eq。在整个取代基范围内给出线性相关性，log(k⁄k0)=−6.287(σ°+1.388Δ\barσR+)，具有出色的精度。α-CF3 对碳正离子中间体的强烈不稳定似乎仅反映在极高的 r 值上，而不反映在取代基效应的 ρ 值上。这与文献中基于简单布朗 σ+ 处理给出的该反应的结论严重冲突。该反应具有极高的共振需求 r=1.4，应该远远超出简单的 Brown σ+ 分析的范围。改变共振需求应该是充分描述关于共轭碳正离子反应的取代基效应的基本要求。

  DOI：

  10.1246/bcsj.63.1129
• 作为产物：
  描述：

  magnesium,1,2-dimethylbenzene-5-ide,bromide 生成 2-(3,4-Dimethylphenyl)-1,1,1-trifluoropropan-2-ol
  参考文献：
  名称：

  替代效应。十九。1-Aryl-1-(trifluoromethyl)ethyl Tosylates 的溶剂分解

  摘要：

  1-芳基-1-（三氟甲基）乙基甲苯磺酸酯的溶剂分解速率在 80% 乙醇水溶液中测定一系列取代基。Brown ρ+σ+ 处理未能给出简单的线性图，但所有 p-π-供体都从元相关线向上偏离。另一方面，Yukawa-Tsuno LArSR Eq。在整个取代基范围内给出线性相关性，log(k⁄k0)=−6.287(σ°+1.388Δ\barσR+)，具有出色的精度。α-CF3 对碳正离子中间体的强烈不稳定似乎仅反映在极高的 r 值上，而不反映在取代基效应的 ρ 值上。这与文献中基于简单布朗 σ+ 处理给出的该反应的结论严重冲突。该反应具有极高的共振需求 r=1.4，应该远远超出简单的 Brown σ+ 分析的范围。改变共振需求应该是充分描述关于共轭碳正离子反应的取代基效应的基本要求。

  DOI：

  10.1246/bcsj.63.1129

文献信息

• Fluorine-Containing Dicarboxylic Acids and Their Novel Polymer Compounds
  申请人：NARIZUKA Satoru

  公开号：US20110282026A1

  公开（公告）日：2011-11-17

  A fluorine-containing dicarboxylic acid represented by formula (1), wherein n represents an integer of 1-4, and the two carboxylic groups are not adjacent to each other on the aromatic ring. It is possible to obtain a linear polymer compound by reacting the fluorine-containing dicarboxylic acid with a comonomer (e.g., diaminodiol). By thermal cyclization, this linear polymer compound can be converted into another polymer compound having superior characteristics.

  公式(1)表示的是含氟二羧酸，其中n代表1-4的整数，且两个羧基不相邻于芳香环上。通过将含氟二羧酸与共聚物（例如二氨基二醇）反应，可以得到线性聚合物化合物。通过热环化，这种线性聚合物化合物可以转化为具有卓越特性的另一种聚合物化合物。
• Fluorinated Dicarboxylic Acid Derivative and Polymer Obtained Therefrom
  申请人：Isono Yoshimi

  公开号：US20110301305A1

  公开（公告）日：2011-12-08

  According to the present invention, a polymer is obtained by polycondensation of a fluorinated dicarboxylic acid derivative of the general formula (M-1) or an acid anhydride of the fluorinated dicarboxylic acid with a polyfunctional compound having two to four reactive groups corresponding in reactivity to carbonyl moieties of the fluorinated dicarboxylic acid derivative or acid anhydride. [Chem. 134] AOCF 2 C-Q-CF 2 COA′  (M-1) In the above formula, Q represents a divalent organic group having a substituted or unsubstituted aromatic ring; and A and A′ each independently represent an organic group. This polymer exhibits a sufficiently low dielectric constant for use as a semiconductor protection film and has the capability of forming a film at a relatively low temperature of 250° C. or lower.

  根据本发明，通过将通式(M-1)的含氟二羧酸衍生物或含氟二羧酸酸酐与具有与含氟二羧酸衍生物或酸酐的羰基部分相对应的两到四个反应性基团的多官能化合物进行聚合缩合反应，可以得到一种聚合物。[Chem. 134]AOCF2C-Q-CF2COA′  (M-1)在上述公式中，Q代表具有取代或未取代芳香环的二价有机基团; A和A'各自独立地表示有机基团。该聚合物表现出足够低的介电常数，可用作半导体保护膜，并具有在相对较低的温度下（250℃或更低）形成膜的能力。
• LIU, KWANG-TING;WU, YUH, WERN, J. CHEM. RES. SYNOP., 1984, N 12, 408-409
  作者：LIU, KWANG-TING、WU, YUH, WERN

  DOI：——

  日期：——
• PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20160041465A1

  公开（公告）日：2016-02-11

  The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
• RESIST PATTERN-FORMING METHOD
  申请人：JSR CORPORATION

  公开号：US20170075224A1

  公开（公告）日：2017-03-16

  A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).