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Benzaldehyde, 5-dodecyl-2-hydroxy-, oxime | 77635-32-6

中文名称
——
中文别名
——
英文名称
Benzaldehyde, 5-dodecyl-2-hydroxy-, oxime
英文别名
4-dodecyl-2-[(E)-hydroxyiminomethyl]phenol
Benzaldehyde, 5-dodecyl-2-hydroxy-, oxime化学式
CAS
77635-32-6
化学式
C19H31NO2
mdl
——
分子量
305.5
InChiKey
UWGTVLYQSJNUFP-CAPFRKAQSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 熔点:
    53-54℃
  • 沸点:
    436.0±38.0 °C(Predicted)
  • 密度:
    0.99

计算性质

  • 辛醇/水分配系数(LogP):
    7.5
  • 重原子数:
    22
  • 可旋转键数:
    12
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.63
  • 拓扑面积:
    52.8
  • 氢给体数:
    2
  • 氢受体数:
    3

安全信息

  • 海关编码:
    2928000090

SDS

SDS:608a6bc58483aaecbece62443ab8a1ca
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上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为产物:
    描述:
    5-十二烷基-2-羟基苯甲醛羟胺 以94%的产率得到
    参考文献:
    名称:
    STEPNIAK-BINIAKIEWICZ D., POL. J. CHEM., 1980, 54, NO 7-8, 1567-1571
    摘要:
    DOI:
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文献信息

  • Polishing systems
    申请人:Misra Sudhanshu
    公开号:US20090318063A1
    公开(公告)日:2009-12-24
    Described herein are polishing apparatus, polishing formulations, and polymeric substrates for use in polishing surfaces, and related methods. The apparatus, formulations, substrates, and methods may each be used in applications involving the polishing of metal and/or metal-containing surfaces such as semiconductor wafers. The apparatus, formulations, polymeric substrates, and related methods described herein may be used without abrasives, and in some instances, without mechanical friction of a pad surface against the surface to be polished. Therefore, defects on a polished surface due to such mechanical polishing processes may be reduced.
  • Stripping Process
    申请人:Fujifilm Electronic Materials U.S.A., Inc.
    公开号:US20180136563A1
    公开(公告)日:2018-05-17
    This disclosure relates to a process for stripping an organic film on a patterned semiconductor substrate. The process includes treating the organic film with an aqueous stripper composition to remove the organic film in one step. The organic film includes at least a first layer and a second layer, the first layer has a dissolution rate of at most about 0.01 μ/min in a developer at 25° C., and the second layer has a dissolution rate of greater than about 0.01 μ/min in the developer at 25° C.
  • US5100532A
    申请人:——
    公开号:US5100532A
    公开(公告)日:1992-03-31
  • [EN] CLEANING COMPOSITION<br/>[FR] COMPOSITION DE NETTOYAGE
    申请人:FUJIFILM ELECTRONIC MAT USA INC
    公开号:WO2017023677A1
    公开(公告)日:2017-02-09
    This disclosure relates to a composition (e.g., a cleaning and/or stripping composition) containing (a) 0.5 - 25 percent by weight an alkaline compound; (b) 1 - 25 percent by weight an alcohol amine compound; (c) 0.1 - 20 percent by weight a hydroxylammonium compound; (d) 5 - 95 percent by weight an organic solvent; (e) 0.1 - 5 percent by weight a corrosion inhibitor compound; and (f) 2 -25 percent by weight water.
  • STEPNIAK-BINIAKIEWICZ D., POL. J. CHEM., 1980, 54, NO 7-8, 1567-1571
    作者:STEPNIAK-BINIAKIEWICZ D.
    DOI:——
    日期:——
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