5-(吗啉甲基)噻吩-2-甲醛 | 893744-01-9

• 分子结构分类: 有机化合物 - 有机氮化合物
• 中文名称: 5-(吗啉甲基)噻吩-2-甲醛
• 英文名称: 5-(Morpholinomethyl)thiophene-2-carbaldehyde
• 英文别名: 5-(morpholin-4-ylmethyl)thiophene-2-carbaldehyde
• CAS: 893744-01-9
• 化学式: C₁₀H₁₃NO₂S
• mdl: MFCD06803315
• 分子量: 211.28
• InChiKey: YPXGCMYNDMFOHE-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.9
• 重原子数：
  14
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  57.8
• 氢给体数：
  0
• 氢受体数：
  4

安全信息

• 海关编码：
  2934999090

文献信息

• Metal chemical mechanical planarization (CMP) composition and methods therefore
  申请人：Versum Materials US, LLC

  公开号：US10465096B2

  公开（公告）日：2019-11-05

  Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise water; abrasive; single chelator, dual chelators or tris chelators; morpholino family compounds as Cu dishing reducing agents. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide can be used in the formulations.

  所提供的化学机械平坦化（CMP）配方可为宽节点或先进节点铜或硅通孔（TSV）提供高且可调的铜去除率和低铜偏移。与其他阻挡层（如钽、钽镍、钛和钛镍）和介电薄膜（如 TEOS、低 K 和超低 K 薄膜）相比，CMP 组合物具有较高的铜膜选择性。CMP 抛光配方包括水；研磨剂；单螯合剂、双螯合剂或三螯合剂；作为铜排减剂的吗啉族化合物。此外，配方中还可使用有机季铵盐、缓蚀剂、氧化剂、pH 值调节剂和杀菌剂。
• Metal Chemical Mechanical Planarization (CMP) Composition And Methods Therefore
  申请人：Versum Materials US, LLC

  公开号：US20200032107A1

  公开（公告）日：2020-01-30

  Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise water; abrasive; single chelator, dual chelators or tris chelators; morpholino family compounds as Cu dishing reducing agents. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide can be used in the formulations.