Transformation of luminescence centers in (SiC)0.95(AlN)0.05 epitaxial Layers under Laser Irradiation
摘要:
The effect of laser irradiation on the photoluminescence of (SiC)(0.95)(AlN)(0.05) epitaxial films was studied. irradiation was found to dislodge Al and N atoms from their substitutional sites, producing radiative donor-acceptor pairs Al-Si-N-C. The average pair separation decreases with increasing irradiation time, as evidenced by the shift of the corresponding emission to higher energies.