Benznorbornadien-oxyd | 13137-34-3

• 分子结构分类: 有机化合物 - 苯类化合物 - 四氢化萘
• 英文名称: Benznorbornadien-oxyd
• 英文别名: benzonorbornadiene epoxide；2,3-epoxy-1,2,3,4-tetrahydro-1,4-methano-naphthalene；1,4-Methanonaphthalene, 2,3-epoxy-1,2,3,4-tetrahydro-, exo-2,3-；10-oxatetracyclo[6.3.1.02,7.09,11]dodeca-2,4,6-triene
• CAS: 13137-34-3
• 化学式: C₁₁H₁₀O
• 分子量: 158.2
• InChiKey: KITHTTSINQXROM-UHFFFAOYSA-N

物化性质

• 沸点：
  267.4±9.0 °C(Predicted)
• 密度：
  1.267±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  1.7
• 重原子数：
  12
• 可旋转键数：
  0
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.45
• 拓扑面积：
  12.5
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  Benznorbornadien-oxyd 在 sodium hydrogen sulfate 作用下， 以 二氯甲烷 为溶剂， 反应 24.0h， 以83%的产率得到9(RS)-hydroxy-1,2,3,4-tetrahydro-1,4-methanonaphthalen-(2RS)-yl sulfate
  参考文献：
  名称：

  Ring opening of epoxides with NaHSO4: isolation of β-hydroxy sulfate esters and an effective synthesis for trans-diols

  摘要：

  Sodium hydrogen sulfate (NaHSO4) was observed to be highly effective as a reagent or catalyst in the ring-opening reactions of epoxides under mild conditions. Reaction of epoxides with NaHSO4 gave isolable P-hydroxy sulfate esters and vicinal diols. Experimenting with different epoxides, the study investigated the scope of the ring-opening reaction. (C) 2008 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.tet.2008.11.092
• 作为产物：
  描述：

  1,4-二氢-1,4-甲桥萘 在 间氯过氧苯甲酸 作用下， 以 二氯甲烷 为溶剂， 反应 12.0h， 生成 Benznorbornadien-oxyd
  参考文献：
  名称：

  一锅法从环氧化物和氯磺酰基异氰酸酯合成恶唑烷酮和五元环状碳酸酯：异步协同途径的理论证据。

  摘要：

  在没有添加剂和催化剂的温和反应条件下，研究了氯磺酰基异氰酸酯（CSI）与具有苯基，苄基和稠环烷基的环氧化物在不同溶剂中的一锅反应。在环化反应中，恶唑烷酮和五元环状碳酸酯的比例接近1：1。这些化合物在二氯甲烷（DCM）中的收率最高。与16种已知化合物一起，用一种有效而直接的方法合成了两种新型的恶唑烷酮衍生物和两种新型的环状碳酸酯。与现有方法相比，此处提出的合成方法具有以下明显的优势：与不含金属的试剂进行一锅法反应，反应时间短，收率高，纯化方法非常简单。此外，在M06-2X / 6-31 + G（d，p）的理论水平上使用密度泛函理论（DFT）方法，阐明了环加成反应的机理。对与导致恶唑烷酮和五元环状碳酸酯的两个可能通道相关的势能面的进一步研究显示，环加成反应通过气相和DCM中的异步协同机制进行。

  DOI：

  10.3762/bjoc.16.148

文献信息

• ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN
  申请人：FUJIFILM Corporation

  公开号：US20140242502A1

  公开（公告）日：2014-08-28

  According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a compound (A) that contains a structure (P) containing at least one phenolic hydroxyl group and a structure (Q) containing at least one phenolic hydroxyl group whose hydrogen atom is replaced by a group (S) with a cyclic structure containing an acid crosslinking group, characterized in that the group (S) with a cyclic structure containing an acid crosslinking group is a group with a polycyclic structure or a group with a cyclic structure containing a hydroxymethyl group and/or an alkoxymethyl group.
• SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION
  申请人：FUJIFILM Corporation

  公开号：US20170005266A1

  公开（公告）日：2017-01-05

  Provided is a semiconductor element having a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound having a repeating unit (IA) represented by the following General Formula (IA) and a repeating unit (IB) represented by the following General Formula (IB). In General Formula (IA), R 1a represents a hydrogen atom, a halogen atom, or an alkyl group. L 1a and L 2a each independently represent a single bond or a linking group. X represents a crosslinkable group. m2a represents an integer of 1 to 5, and in a case where m2a is 2 or more, m2a number of X's may be the same or different from each other, m1a represents an integer of 1 to 5, and in a case where m1a is 2 or more, m1a number of (-L 2a -(X) m2a )'s may be the same or different from each other. In General Formula (IB), R 1b represents a hydrogen atom, a halogen atom, or an alkyl group. L 1b represents a single bond or a linking group, and Ar 1b represents an aromatic ring, m1b represents an integer of 1 to 5.
• SEMICONDUCTOR DEVICE AND INSULATING LAYER-FORMING COMPOSITION
  申请人：FUJIFILM Corporation

  公开号：US20170054076A1

  公开（公告）日：2017-02-23

  Provided is a semiconductor device which includes a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound that has a repeating unit (IA) represented by the following Formula (IA) and a repeating unit (IB) represented by the following Formula (IB); and an insulating layer-forming composition which is used for forming an insulating layer of a semiconductor device and contains a polymer compound that has the following repeating units (IA) and (IB). In Formulae, R 1a and R 1b each independently represent a hydrogen atom, a halogen atom, or an alkyl group. L 1a , L 2a , and L 1b each independently represent a single bond or a linking group. X represents a crosslinkable group and Y B represents a decomposable group or a hydrogen atom. m1a and m2a each independently represent an integer of 1 to 5. The symbol “*” represents a bonding position of the repeating units.
• US9400430B2
  申请人：——

  公开号：US9400430B2

  公开（公告）日：2016-07-26
• US9905768B2
  申请人：——

  公开号：US9905768B2

  公开（公告）日：2018-02-27