N-benzyl-N,N-dimethyl-anilinium; iodide | 25458-36-0

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: N-benzyl-N,N-dimethyl-anilinium; iodide
• 英文别名: N-Benzyl-N,N-dimethyl-anilinium; Jodid；Dimethyl-phenyl-benzyl-ammoniumiodid；N,N-Dimethyl-N-benzylanilinium-iodid；Benzyl-dimethyl-phenylazanium;iodide
• CAS: 25458-36-0
• 化学式: C₁₅H₁₈N*I
• 分子量: 339.219
• InChiKey: UOBLUQLSQKJLCU-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  0.46
• 重原子数：
  17
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.2
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  1

反应信息

• 作为反应物：
  描述：

  N-benzyl-N,N-dimethyl-anilinium; iodide 、 碘甲烷 生成 苯基三甲基碘化铵
  参考文献：
  名称：

  Jones; Hill, Journal of the Chemical Society, 1907, vol. 91, p. 2088

  摘要：

  DOI：
• 作为产物：
  描述：

  N,N-甲基苄基苯胺 、 硫酸二甲酯 生成 N-benzyl-N,N-dimethyl-anilinium; iodide
  参考文献：
  名称：

  Wedekind, Chemische Berichte, 1906, vol. 39, p. 483

  摘要：

  DOI：

文献信息

• Studies on the decomposition of tetra-alkylammonium salts in solution. Part III: Interpretation of Hammett correlations
  作者：E. C. F. Ko、K. T. Leffek

  DOI：10.1139/v70-307

  日期：1970.6.15

  Hammett free energy correlations are reported for the decomposition reactions of tetra-alkylammonium halides in chloroform and acetone solution. All the salts contained a substituted benzyl group attached to the nitrogen atom and decomposed to yield a benzyl iodide and dimethylaniline as the only products.The curved Hammett plots for para-substituted benzyl compounds are compared to the linear plot

  报告了四烷基卤化铵在氯仿和丙酮溶液中的分解反应的哈米特自由能相关性。所有的盐都含有一个连接在氮原子上的取代苄基，并分解产生苄基碘和二甲基苯胺作为唯一的产物。对位取代苄基化合物的曲线哈米特图与之前发现的一系列盐的线性图进行了比较每个都包含一个对位取代的苯基，得出的结论是曲线哈米特图不能用作机制改变的证据，除非取代基和反应位点之间不存在直接共轭效应。
• THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3680275A1

  公开（公告）日：2020-07-15

  A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): where R1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R2, R3 each represent the R1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

  热固性含硅化合物包含一个或多个结构单元，结构单元的通式如下（Sx-1）、（Sx-2）和（Sx-3）： 其中，R1 代表一个一价有机基团，该基团包含一个可选具有取代基的苯基和一个具有 3 至 10 个碳原子的非芳香环；R2、R3 分别代表 R1 或一个具有 1 至 30 个碳原子的一价有机基团。因此，本发明提供了一种可用于含硅抗蚀剂底层薄膜材料的热固性含硅化合物，该化合物能够实现既具有抗碱性显影剂性能又能在不含过氧化氢的碱性剥离液中提高溶解性的矛盾特性。
• COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3731017A1

  公开（公告）日：2020-10-28

  The present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed by a chemically-amplified resist which uses an acid as a catalyst. A composition for forming a silicon-containing resist underlayer film, including a thermosetting silicon-containing material (Sx), a curing catalyst (Xc), and a solvent, in which a distance of diffusion of the curing catalyst (Xc) from a resist underlayer film formed from the composition for forming a silicon-containing resist underlayer film to a resist upper layer film to be formed on the resist underlayer film is 5 nm or less.

  本发明提供了一种抗蚀剂底层薄膜，它能够提高由化学放大抗蚀剂形成的精细图案的 LWR 和 CDU，该抗蚀剂使用酸作为催化剂。一种用于形成含硅光刻胶下层膜的组合物，包括热固性含硅材料 (Sx)、固化催化剂 (Xc) 和溶剂，其中固化催化剂 (Xc) 从由该用于形成含硅光刻胶下层膜的组合物形成的光刻胶下层膜扩散到将在该光刻胶下层膜上形成的光刻胶上层膜的距离为 5 nm 或以下。
• METHOD FOR MEASURING DISTANCE OF DIFFUSION OF CURING CATALYST
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3736632A1

  公开（公告）日：2020-11-11

  The present invention provides a method for measuring a distance of diffusion of a curing catalyst from a silicon-containing film to a resist upper layer film formed on the silicon-containing film. A method for measuring a distance of diffusion of a curing catalyst (Xc) for a thermosetting silicon-containing material (Sx) includes the steps of: forming a silicon-containing film (Sf) from a composition containing a thermosetting silicon-containing material (Sx), a curing catalyst (Xc) and a solvent (a); coating the silicon-containing film (Sf) with a photosensitive resin composition containing a resin (A) whose solubility in alkaline developer is increased by the action of an acid, an acid generator and a solvent (b), and subsequently heating to prepare a substrate on which the silicon-containing film (Sf) and a resin film are formed; irradiating the substrate with a high energy beam or an electron beam to generate an acid and heat-treating the substrate to increase the solubility of the resin (A) in an alkaline developer by the action of the acid in the resin film; dissolving the resin film in an alkaline developer; and measuring a film thickness of the remaining resin (A).

  本发明提供了一种测量固化催化剂从含硅薄膜到形成在含硅薄膜上的抗蚀剂上层薄膜的扩散距离的方法。测量热固性含硅材料（Sx）的固化催化剂（Xc）扩散距离的方法包括以下步骤：用含有热固性含硅材料 (Sx)、固化催化剂 (Xc) 和溶剂 (a) 的组合物形成含硅薄膜 (Sf)；用含有树脂 (A) 的光敏树脂组合物涂覆含硅薄膜 (Sf)，树脂 (A) 在碱性显影剂中的溶解度在酸、酸发生剂和溶剂 (b) 的作用下会增加，然后加热制备基底，在基底上形成含硅薄膜 (Sf) 和树脂薄膜；用高能束或电子束照射基底以产生酸，并对基底进行热处理，通过酸在树脂膜中的作用提高树脂 (A) 在碱性显影剂中的溶解度；将树脂膜溶解在碱性显影剂中；以及测量剩余树脂 (A) 的膜厚。
• COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP4020081A1

  公开（公告）日：2022-06-29

  The present invention is a composition for forming a silicon-containing resist underlayer film, containing one or both of a hydrolysis product and a hydrolysis condensate of one or more silicon compounds (A-1) shown by the following general formula (1). This provides: a composition for forming a silicon-containing resist underlayer film with which it is possible to form a resist underlayer film having favorable adhesiveness to resist patterns regardless of whether in negative development or positive development, and also having favorable adhesiveness to finer patterns as in EUV photo-exposure; a patterning process; and a silicon compound.

  本发明是一种用于形成含硅光刻胶底层膜的组合物，其中含有一种或多种硅化合物（A-1）的水解产物和水解缩合物中的一种或两种，如下通式（1）所示。这就提供了：一种用于形成含硅抗蚀剂底层膜的组合物，使用该组合物可以形成抗蚀剂底层膜，无论在负显影还是正显影中，该抗蚀剂底层膜都对抗蚀剂图案具有良好的附着性，而且在超紫外光曝光中，该抗蚀剂底层膜还对更精细的图案具有良好的附着性；一种图案化工艺；以及一种硅化合物。