Bis(4-cyclohexylphenyl)iodanium | 94287-61-3

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: Bis(4-cyclohexylphenyl)iodanium
• CAS: 94287-61-3
• 化学式: C24H30I+
• 分子量: 445.4
• InChiKey: HRTUBJZOPCUYSL-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  9.4
• 重原子数：
  25
• 可旋转键数：
  4
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.5
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

文献信息

• ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20200369605A1

  公开（公告）日：2020-11-26

  An onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by lithography, the resist composition exhibits a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

  提供一种化学式为（1）的铵盐和包括该铵盐作为PAG的化学增感抗蚀组合物。通过光刻加工时，该抗蚀组合物表现出高灵敏度，最小LWR和改善的CDU，无论其为正像还是负像。
• Chemically Amplified Positive Resist Composition and Resist Pattern Forming Process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20180180992A1

  公开（公告）日：2018-06-28

  A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of formula (A) has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed.

  一种正性光刻胶组合物，包括一种聚合物，该聚合物适于在酸的作用下分解，以增加其在碱性显影剂中的溶解度，以及一种化学式（A）的磺化物化合物，具有高分辨率。当使用光刻技术处理光刻胶组合物时，可以形成最小LER的图案。
• CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20180180998A1

  公开（公告）日：2018-06-28

  A negative resist composition comprising a sulfonium compound having formula (A) and a base polymer is provided. The resist composition exhibits a high resolution during pattern formation and forms a pattern with minimal LER.

  提供一种负型光刻胶组合物，包括具有公式(A)的磺化物化合物和基础聚合物。该光刻胶组合物在图案形成期间表现出高分辨率，并形成具有最小LER的图案。
• NOVEL CARBOXYLIC ACID ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170315442A1

  公开（公告）日：2017-11-02

  A carboxylic acid onium salt of formula (1) exerts a satisfactory acid diffusion control (or quencher) function. A resist composition comprising the carboxylic acid onium salt can be processed by DUV or EUV lithography to form a resist pattern with improved resolution, reduced LWR and minimal defects after development.

  式为（1）的羧酸铵盐具有令人满意的酸扩散控制（或淬灭）功能。包含该羧酸铵盐的抗蚀剂组合物可以通过DUV或EUV光刻技术进行加工，以形成具有改善分辨率、降低线宽粗糙度和开发后最小缺陷的抗蚀剂图案。
• Process for preparing diaryls
  申请人：NIPPON PETROCHEMICALS COMPANY, LIMITED

  公开号：EP0119065A1

  公开（公告）日：1984-09-19

  A process for preparing a diaryl or a mixture of diaryls represented by any or a combination of the following formulae (II), (III), and (IV), characterized in that a diaryliodonium salt represented by the following formula (1) is reacted in a solvent in the presence of a transition metal catalyst and a reducing metal at a temperature in the range of room temperature to 100°C: wherein Ar1 and Ar2, which may be alike or different, are each an aryl group which may have a substituent group or groups and X⊖ is a counter ion which is inert to said reaction.

  一种制备由下式(II)、(III)和(IV)中任何一种或其组合代表的二芳基或二芳基混合物的工艺，其特征在于由下式(1)代表的二芳基碘鎓盐在溶剂中，在过渡金属催化剂和还原金属存在下，于室温至100℃范围内进行反应： 其中 Ar1 和 Ar2（可以相同或不同）各自为芳基，可带有一个或多个取代基，X⊖ 为对所述反应惰性的反离子。