We investigated the photoluminescence spectra as well as the crystal structure and optical energy gaps of the Zn1-xCdxAl2Se4 single crystals grown by the chemical transport reaction method. It was shown from the analysis of the observed x-ray diffraction patterns that these crystals have a defect chalcopyrite structure for a whole composition. The lattice constant a increases from 5.5561 A for x = 0.0 (ZnAl2Se4) to 5.6361 A for x = 1.0 (CdAl2Se4) with increasing x, whereas the lattice constant c decreases from 10.8890 A for x = 0.0 to 10.7194 A for x = 1.0. The optical energy gaps at 13 K were found to range from 3.082 eV (x = 1.0) to 3.525 eV (x = 0.0). The temperature dependence of the optical energy gaps was well fitted with the Varshni equation. We observed two emission bands consisting of a strong blue emission band and a weak broad emission band due to donor–acceptor pair recombination in the Zn1-xCdxAl2Se4 for 0.0 ⩽ x ⩽ 1.0. These emission bands showed a red shift with increasing x. The energy band scheme for the radiative mechanism of the Zn1-xCdxAl2Se4 was proposed on the basis of the photoluminescence thermal quenching analysis along with the measurements of photo-induced current transient spectroscopy. The proposed energy band model permits us to assign the observed emission bands.
我们研究了用化学传输反应法生长的 Zn1-xCdxAl2Se4 单晶的光致发光光谱、晶体结构和光学能隙。对观察到的 X 射线衍射图样的分析表明,这些晶体在整个成分中具有黄铜矿缺陷结构。随着 x 值的增加,晶格常数 a 从 x = 0.0 时的 5.5561 A(ZnAl2Se4)增加到 x = 1.0 时的 5.6361 A(CdAl2Se4),而晶格常数 c 则从 x = 0.0 时的 10.8890 A 减小到 x = 1.0 时的 10.7194 A。13 K 时的光能隙范围为 3.082 eV(x = 1.0)至 3.525 eV(x = 0.0)。光学能隙的温度依赖性与 Varshni 方程十分吻合。在 0.0 ⩽ x ⩽ 1.0 时,我们在 Zn1-xCdxAl2Se4 中观察到两个发射带,其中包括一个强蓝色发射带和一个弱宽发射带,它们是由供体-受体对重组引起的。根据光致发光热淬灭分析和光诱导电流瞬态光谱的测量结果,我们提出了 Zn1-xCdxAl2Se4 辐射机制的能带方案。所提出的能带模型允许我们分配所观察到的发射带。