(2-chlorophenyl)methyl-triphenyl-λ5-phosphane

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: (2-chlorophenyl)methyl-triphenyl-λ5-phosphane
• 化学式: C₂₅H₂₂ClP
• 分子量: 388.9
• InChiKey: CKIJOHBZYBOTQN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.7
• 重原子数：
  27
• 可旋转键数：
  5
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.04
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

文献信息

• CMP polishing liquid and polishing method
  申请人：HITACHI CHEMICAL COMPANY, LTD.

  公开号：US10283373B2

  公开（公告）日：2019-05-07

  An embodiment of the present invention relates to a CMP polishing liquid used for polishing a polishing target surface having at least a cobalt-containing portion and a metal-containing portion that contains a metal other than cobalt, wherein the CMP polishing liquid contains polishing particles, a metal corrosion inhibitor and water, and has a pH of 4.0 or less, and when the corrosion potential EA of cobalt and the corrosion potential EB of the metal are measured in the CMP polishing liquid, the absolute value of the corrosion potential difference EA−EB between the corrosion potential EA and the corrosion potential EB is 0˜300 mV.

  本发明的一个实施例涉及一种用于抛光抛光目标表面的 CMP 抛光液，该抛光目标表面至少具有含钴部分和含有钴以外金属的含金属部分，其中 CMP 抛光液含有抛光颗粒、金属腐蚀抑制剂和水，且 pH 值为 4.0 或更低，当在 CMP 抛光液中测量钴的腐蚀电位 EA 和金属的腐蚀电位 EB 时，腐蚀电位 EA 和腐蚀电位 EB 之间的腐蚀电位差 EA-EB 的绝对值为 0˜300 mV。
• CMP POLISHING SOLUTION AND POLISHING METHOD USING SAME
  申请人：HITACHI CHEMICAL COMPANY, LTD.

  公开号：US20160086819A1

  公开（公告）日：2016-03-24

  A CMP polishing liquid for polishing a ruthenium-based metal, comprising polishing particles, an acid component, an oxidizing agent, and water, wherein the acid component contains at least one selected from the group consisting of inorganic acids, monocarboxylic acids, carboxylic acids having a plurality of carboxyl groups and having no hydroxyl group, and salts thereof, the polishing particles have a negative zeta potential in the CMP polishing liquid, and the pH of the CMP polishing liquid is less than 7.0.
• CMP POLISHING LIQUID AND POLISHING METHOD
  申请人：HITACHI CHEMICAL COMPANY, LTD.

  公开号：US20170154787A1

  公开（公告）日：2017-06-01

  An embodiment of the present invention relates to a CMP polishing liquid used for polishing a polishing target surface having at least a cobalt-containing portion and a metal-containing portion that contains a metal other than cobalt, wherein the CMP polishing liquid contains polishing particles, a metal corrosion inhibitor and water, and has a pH of 4.0 or less, and when the corrosion potential E A of cobalt and the corrosion potential E B of the metal are measured in the CMP polishing liquid, the absolute value of the corrosion potential difference E A −E B between the corrosion potential E A and the corrosion potential E B is 0˜300 mV.
• CHEMICAL SOLUTION AND METHOD FOR TREATING SUBSTRATE
  申请人：FUJIFILM Corporation

  公开号：US20210189235A1

  公开（公告）日：2021-06-24

  The present invention provides a chemical solution which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated. Furthermore, the present invention provides a method of treating a substrate. The chemical solution according to an embodiment of the present invention is used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of specific hypochlorous acids selected from the group consisting of hypochlorous acid and a salt thereof and contains one or more kinds of specific anions selected from the group consisting of ClO 3 − and Cl − . In a case where the chemical solution contains one kind of the specific anion, the content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two kinds of the specific anions, a content of each of two kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.