5-Methyldibenzothiophen-5-ium

• 分子结构分类: 有机化合物 - 苯类化合物
• 英文名称: 5-Methyldibenzothiophen-5-ium
• 化学式: C13H11S+
• 分子量: 199.29
• InChiKey: QPLQFHYYWFDXIU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.7
• 重原子数：
  14
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.08
• 拓扑面积：
  1
• 氢给体数：
  0
• 氢受体数：
  0

文献信息

• CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS
  申请人：Ohsawa Youichi

  公开号：US20130034813A1

  公开（公告）日：2013-02-07

  A chemically amplified positive resist composition comprising (A) a sulfonium salt of 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The carboxylic acid sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed.

  一种化学增感正型光刻胶组合物，包括（A）三氟甲基-3,3,3-三氟-2-羟基-2-丙酸磺酸盐，（B）酸发生剂，（C）碱性树脂和（D）有机溶剂，适用于ArF浸没光刻。羧酸磺酸盐具有高度疏水性，在浸没水中几乎不溶出。通过控制酸扩散，可以构建具有高分辨率的图案轮廓。
• NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：OHASHI Masaki

  公开号：US20110189607A1

  公开（公告）日：2011-08-04

  There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R 1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R 2 and R 3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R 2 and R 3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.

  本发明公开了一种由下列通式（1）表示的烷基磺鎵盐。在该式中，X和Y分别表示具有可聚合官能团的基团；Z表示具有1至33个碳原子的双价碳氢基团，可选地含有一个杂原子；R1表示具有1至36个碳原子的双价碳氢基团，可选地含有一个杂原子；R2和R3分别表示具有1至30个碳原子的单价碳氢基团，可选地含有一个杂原子，或者R2和R3可以与该式中的硫原子一起形成环。可以提供一种可用作抗蚀剂组分的烷基磺鎵盐，该抗蚀剂组分在使用高能束如ArF准分子激光、EUV光和电子束作为光源的光刻工艺中，提供高分辨率和优异的LER，以及从该烷基磺鎵盐得到的聚合物、包含该聚合物的抗蚀剂组分和使用该抗蚀剂组分进行图案化处理的方法。
• POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS
  申请人：Masunaga Keiichi

  公开号：US20110212391A1

  公开（公告）日：2011-09-01

  A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER.

  使用含有氟化羧基离子盐结构的重复单元的聚合物作为侧链，用于配制化学增感正型光刻胶组分。当该组分通过光刻工艺形成正型图案时，胶膜中的酸扩散均匀缓慢，从而改善LER。
• CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Masunaga Keiichi

  公开号：US20110212390A1

  公开（公告）日：2011-09-01

  A chemically amplified negative resist composition is provided comprising (A) an alkali-soluble base polymer, (B) an acid generator, and (C) a nitrogen-containing compound, the base polymer (A) turning alkali insoluble under the catalysis of acid. A polymer having a fluorinated carboxylic acid onium salt on a side chain is included as the base polymer. Processing the negative resist composition by a lithography process may form a resist pattern with advantages including uniform low diffusion of acid, improved LER, and reduced substrate poisoning.

  提供了一种化学放大负型光刻胶组合物，包括（A）一种可溶于碱性溶液的基础聚合物，（B）一种酸发生剂，和（C）一种含氮化合物，基础聚合物（A）在酸的催化下变为碱不溶性。在侧链上含有氟化羧酸亚烷基盐的聚合物被包括在基础聚合物中。通过光刻工艺处理负型光刻胶组合物可以形成具有以下优点的光刻图案：酸的扩散均匀低、LER改善和减少衬底污染。
• POLYMER, MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20130224659A1

  公开（公告）日：2013-08-29

  A sulfonic acid anion-containing polymer having an alkylsulfonium cation not in covalent bond thereto can be readily prepared by reacting a sulfonic acid anion-containing polymer having an ammonium or metal cation with an alkylsulfonium salt under mild conditions. A resist composition comprising the inventive polymer is effective for suppressing acid diffusion since the sulfonium salt is bound to the polymer backbone. When processed by the ArF lithography, the polymer exhibits a lower absorption at the exposure wavelength than the triarylsulfonium salt form PAGs, resulting in improved resolution, mask fidelity, and LWR.

  一种含有烷基磺酸铵阳离子的聚合物，其烷基磺酸铵阳离子与聚合物主链上的其他部分不形成共价键，可以通过在温和条件下将含有铵或金属阳离子的磺酸根聚合物与烷基磺酸盐反应而容易制备。由该聚合物构成的抗蚀剂组合物对抑制酸扩散有效，因为磺酸盐与聚合物主链相结合。当通过ArF光刻工艺进行处理时，该聚合物在曝光波长处的吸收较三芳基磺酸盐形式的PAGs低，从而提高了分辨率、掩模保真度和LWR。