特殊(脂质)递送:通过对脂质进行大量头基修饰,研究了可电离脂质 p K a在脂质纳米粒子体内递送 siRNA 中的作用。脂质P的的紧密相关ķ一个 值和鼠标FVII基因(FVII ED的沉默50)被发现,具有最佳p ķ一个范围的6.2-6.5(见图)。本研究中最有效的阳离子脂质的 ED 50水平在小鼠中约为 0.005 mg kg -1,在非人类灵长类动物中低于 0.03 mg kg -1。
Post chemical mechanical polishing formulations and method of use
申请人:Entegris, Inc.
公开号:US10731109B2
公开(公告)日:2020-08-04
A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.
The disclosure generally relates to a composition and process for cleaning residue and/or contaminants from microelectronic devices having said residue and contaminants thereon. The residue may include post-CMP, post-etch, and/or post-ash residue. The compositions and methods are particularly advantageous when cleaning a microelectronic surface comprising copper, low-k dielectric materials, and barrier materials comprising at least one of tantalum-containing material, cobalt-containing material, tantalum-containing, tungsten-containing, and ruthenium-containing material.
A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.