A cleaning composition and process for cleaning an in-process microelectronic device substrate, e.g., by post-chemical mechanical polishing (CMP) cleaning, to remove residue from a surface thereof, wherein the cleaning composition may be especially effective for cleaning a substrate surface that includes exposed metal such as cobalt, copper, or both, along with dielectric or low k dielectric material, and wherein the cleaning composition includes corrosion inhibitor to inhibit corrosion of the exposed metal.
一种清洁组合物和工艺,用于清洁在制品微电子器件基板,例如通过
化学机械抛光(
CMP)后清洁,以去除其表面的残留物,其中清洁组合物对于清洁基板表面特别有效,该基板表面包括暴露
金属,例如
钴、
铜或两者,以及介电或低k介电材料,其中清洁组合物包括腐蚀
抑制剂,以抑制暴露
金属的腐蚀。