for around 4 min after the power was turned off. It suggested that dynamic random access memory (DRAM) was exhibited for the PI(AAPT-6FDA) device and that static random access memory (SRAM) was for the PI(APT-6FDA) device. The volatile memory characteristics were probably attributed to the unstable charge transfer (CT) complex based on the weak theoretical dipole moments of the studied PIs. The dual-mediated
两种新型功能性聚
酰亚胺(
PI),
PI(
AAPT-
TPA)和
PI(A
PT-
TPA),由给电子的4-
氨基-4'-(对
氨基苯氧基)-
三苯胺(
AAPT)或4,4'-组成制备了双(对
氨基苯氧基)-
三苯胺(A
PT)和电子接受的邻苯二甲
酰亚胺部分,用于存储器件的应用。
TPA部分作为电子给体,有望增强邻苯二甲
酰亚胺部分(电子受体)的电子给体和电荷传输能力。单苯氧基键
PI(
AAPT-
TPA)的T g较高和比双苯氧基键
PI(A
PT-
TPA)更低的带隙。它暗示了前者的刚性,并导致了不同的记忆特性。具有ITO /
PI / Al构造的存储设备表现出两种导电状态,并且可以以10 8 -10 9的高ON / OFF电流比正向或负向扫描。移除施加的电压后,
PI(
AAPT-
6FDA)器件会迅速从ON状态变为OFF状态,而关闭电源后,
PI(A
PT-
6FDA)器件的ON状态可能会保持约4分钟。这表明
PI(
AAPT-
6FDA)