申请人:Yahagi Isao
公开号:US20140070205A1
公开(公告)日:2014-03-13
An object of the invention is to provide an organic thin film transistor insulating layer material which can be used to produce organic thin film transistors having a small absolute value of threshold voltage and low hysteresis. The solution to the problem is an organic thin film transistor insulating layer material including a macromolecular compound (A) which contains a repeating unit having a cyclic ether structure and a repeating unit having an organic group capable of being detached by an acid.