4-Octyl-2-phenoxybenzenesulfonic acid

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: 4-Octyl-2-phenoxybenzenesulfonic acid
• 英文别名: 4-octyl-2-phenoxybenzenesulfonic acid
• 化学式: C₂₀H₂₆O₄S
• 分子量: 362.5
• InChiKey: RPVFLLTXLUDBTK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  6.2
• 重原子数：
  25
• 可旋转键数：
  10
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.4
• 拓扑面积：
  72
• 氢给体数：
  1
• 氢受体数：
  4

文献信息

• Composition for coating resist pattern
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10558119B2

  公开（公告）日：2020-02-11

  The invention provides a composition for coating a resist pattern and reversing the pattern by utilizing a difference in etching rates. A composition for applying to a resist pattern includes a component (A) which is at least one compound selected from the group consisting of a metal oxide (a1), a polyacid (a2), a polyacid salt (a3), a hydrolyzable silane (a4), a hydrolysis product (a5) of the hydrolyzable silane, and a hydrolysis condensate (a6) of the hydrolyzable silane; and a component (B), which is an aqueous solvent, in which the hydrolyzable silane (a4) is (i) a hydrolyzable silane containing an organic group having an amino group, (ii) a hydrolyzable silane containing an organic group having an ionic functional group, (iii) a hydrolyzable silane containing an organic group having hydroxy group, or (iv) a hydrolyzable silane containing an organic group having a functional group convertible to hydroxy group.

  本发明提供了一种用于涂覆抗蚀剂图案并利用蚀刻率差异反转图案的组合物。一种用于涂覆抗蚀剂图案的组合物包括一种组分（A），它是至少一种选自由金属氧化物（a1）、多酸（a2）、多酸盐（a3）、可水解硅烷（a4）、可水解硅烷的水解产物（a5）和可水解硅烷的水解缩合物（a6）组成的组的化合物；和组分 (B)，它是一种水性溶剂，其中可水解硅烷 (a4) 是 (i) 含有氨基的有机基团的可水解硅烷，(ii) 含有离子官能团的有机基团的可水解硅烷，(iii) 含有羟基的有机基团的可水解硅烷，或 (iv) 含有可转换为羟基的官能团的有机基团的可水解硅烷。
• Method for producing resist pattern coating composition with use of solvent replacement method
  申请人：NISSAN CHEMICAL CORPORATION

  公开号：US11531269B2

  公开（公告）日：2022-12-20

  Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm). Production method that development is negative development with organic solvent.

  在光刻工艺中用于图案抗蚀剂薄膜的涂层组合物的生产方法，用于溶剂显影以反转图案。该方法包括：通过在非醇类亲水溶剂中水解和冷凝可水解硅烷，获得水解缩合产物的步骤；溶剂置换步骤，其中用疏水性溶剂置换非醇类亲水溶剂以获得水解缩合产物。生产半导体器件的方法，包括：将抗蚀剂组合物涂在基片上并形成抗蚀剂薄膜的步骤；对形成的抗蚀剂薄膜进行曝光和显影的步骤；将通过上述生产方法获得的组合物涂在步骤中显影期间或之后获得的图案抗蚀剂薄膜上，在图案之间形成涂膜的步骤；通过蚀刻和反转图案去除图案抗蚀剂薄膜的步骤。使用 ArF 激光（波长 193 纳米）或 EUV（波长 13.5 纳米）进行曝光的生产方法。使用有机溶剂进行负显影的生产方法。
• COMPOSITION FOR COATING RESIST PATTERN
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20180149977A1

  公开（公告）日：2018-05-31

  The invention provides a composition for coating a resist pattern and reversing the pattern by utilizing a difference in etching rates. A composition for applying to a resist pattern includes a component (A) which is at least one compound selected from the group consisting of a metal oxide (a1), a polyacid (a2), a polyacid salt (a3), a hydrolyzable silane (a4), a hydrolysis product (a5) of the hydrolyzable silane, and a hydrolysis condensate (a6) of the hydrolyzable silane; and a component (B), which is an aqueous solvent, in which the hydrolyzable silane (a4) is (i) a hydrolyzable silane containing an organic group having an amino group, (ii) a hydrolyzable silane containing an organic group having an ionic functional group, (iii) a hydrolyzable silane containing an organic group having hydroxy group, or (iv) a hydrolyzable silane containing an organic group having a functional group convertible to hydroxy group.
• RESIST PATTERN COATING COMPOSITION INCLUDING VINYL GROUP- OR (METH) ACRYLOXY GROUP-CONTAINING POLYSILOXANE
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20180197731A1

  公开（公告）日：2018-07-12

  A composition to be applied onto a resist pattern comprising a polysiloxane obtained by hydrolytically condensing a hydrolyzable silane and a carboxylic ester solvent or an ether solvent, wherein the hydrolyzable silane includes a vinyl group- or (meth)acryloxy group-containing hydrolyzable silane. A hydrolyzable silane includes the vinyl group- or (meth)acryloxy group-containing hydrolyzable silane at a content of 20 to 100 mol % in the total hydrolyzable silane. A method for producing a semiconductor device, the method includes: a step (1) of applying a resist onto a substrate; a step (2) of exposing a resist film to light and subsequently developing the resist film to form a resist pattern; a step (3) of applying the composition as described above onto the resist pattern during the development or after the development; and a step (4) of removing the resist pattern by etching to reverse the pattern.