N,N'-Di-(5-tetrazolyl)terephthalamid | 20612-90-2

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: N,N'-Di-(5-tetrazolyl)terephthalamid
• 英文别名: N,N'-bis-(1(2)H-tetrazol-5-yl)-terephthalamide；1-N,4-N-bis(2H-tetrazol-5-yl)benzene-1,4-dicarboxamide
• CAS: 20612-90-2
• 化学式: C₁₀H₈N₁₀O₂
• 分子量: 300.239
• InChiKey: VWHHDGICZHSEPY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.6
• 重原子数：
  22
• 可旋转键数：
  4
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  167
• 氢给体数：
  4
• 氢受体数：
  8

文献信息

• Pharmaceutical Preparations Comprising Insulin, Zinc Ions and Zinc-Binding Ligand
  申请人：Kaarsholm Niels Christian

  公开号：US20090123563A1

  公开（公告）日：2009-05-14

  Novel preparations comprising branched ligands for the HisB10 Zn2+ sites of the R-state insulin hexamer. The preparations have a prolonged action designed for flexible injection regimes.

  这段话的中文翻译如下：使用分支配体的新型制备物，用于R-状态胰岛素六聚体的HisB10 Zn2+位点。这些制备物具有长效作用，旨在为灵活的注射方案设计。
• Cleaning agent for semiconductor device and cleaning method using the same
  申请人：FUJIFILM Corporation

  公开号：EP2045318A1

  公开（公告）日：2009-04-08

  The present invention provides a cleaning agent for cleaning a semiconductor device having copper wiring on the surface thereof following a chemical mechanical polishing process in a production process of a semiconductor device, including a compound represented by the following formula (I):         X1-L-X2     formula (I) wherein, in formula (I), X1 and X2 each independently represent a monovalent substituent formed by removing one hydrogen atom from a heterocycle containing at least one nitrogen atom, and L represents a divalent linking group; and provides a cleaning method using the cleaning agent.

  本发明提供了一种清洁剂，用于在半导体器件的生产过程中经过化学机械抛光工序后清洁表面有铜线的半导体器件，包括由下式(I)表示的化合物： X1-L-X2 式（I） 其中，在式(I)中，X1 和 X2 各自独立地代表通过从含有至少一个氮原子的杂环中移除一个氢原子而形成的一价取代基，L 代表二价连接基团；并提供一种使用该清洗剂的清洗方法。
• CLEANING AGENT FOR SEMICONDUCTOR DEVICE AND CLEANING METHOD USING THE SAME
  申请人：NISHIWAKI Yoshinori

  公开号：US20090088361A1

  公开（公告）日：2009-04-02

  The present invention provides a cleaning agent for cleaning a semiconductor device having copper wiring on the surface thereof following a chemical mechanical polishing process in a production process of a semiconductor device, including a compound represented by the following formula (I): X 1 -L—X 2 formula (I) wherein, in formula (I), X 1 and X 2 each independently represent a monovalent substituent formed by removing one hydrogen atom from a heterocycle containing at least one nitrogen atom, and L represents a divalent linking group; and provides a cleaning method using the cleaning agent.
• Metal polishing slurry and chemical mechanical polishing method
  申请人：Yoshikawa Masaru

  公开号：US20100075500A1

  公开（公告）日：2010-03-25

  The invention provides a metal polishing slurry containing a compound represented by the general formula (1): (X 1 ) n -L wherein X 1 represents a heterocycle containing at least one nitrogen atom, n represents an integer of 2 or more, and L represents a linking group having a valence of 2 or more, provided that X 1 s whose number is n may be the same or different, an oxidizer and an organic acid; and a method of chemical mechanical polishing using such slurry. The metal polishing slurry and the chemical mechanical polishing method are used in chemical mechanical polishing in the step of manufacturing semiconductor devices and enable a high polishing rate to be achieved while causing minimal dishing in polishing an object (wafer).
• US7879893B2
  申请人：——

  公开号：US7879893B2

  公开（公告）日：2011-02-01