Tetrakis(2-ethenoxyethyl) benzene-1,2,4,5-tetracarboxylate

• 分子结构分类: 有机化合物 - 苯类化合物 - 苯和取代衍生物
• 英文名称: Tetrakis(2-ethenoxyethyl) benzene-1,2,4,5-tetracarboxylate
• 英文别名: tetrakis(2-ethenoxyethyl) benzene-1,2,4,5-tetracarboxylate
• 化学式: C₂₆H₃₀O₁₂
• 分子量: 534.5
• InChiKey: OPDQMYIXQRSABN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.7
• 重原子数：
  38
• 可旋转键数：
  24
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.31
• 拓扑面积：
  142
• 氢给体数：
  0
• 氢受体数：
  12

文献信息

• Photoresist underlayer film-forming composition and pattern forming process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2813890A2

  公开（公告）日：2014-12-17

  In lithography, a composition comprising a novolak resin comprising recurring units derived from a naphtholphthalein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO2 substrates.

  在光刻技术中，使用由萘酚酞递归单元组成的酚醛树脂组合物来形成光刻胶底层膜。该底层膜可在碱水中剥离，不会对离子注入的硅基底或二氧化硅基底造成损坏。
• Underlayer film-forming composition and pattern forming process
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US10228621B2

  公开（公告）日：2019-03-12

  In lithography, a composition comprising a novolak resin comprising recurring units derived from a phenolphthalein, Phenol Red, Cresolphthalein, Cresol Red, or Thymolphthalein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO2 substrates.

  在光刻技术中，一种包含由酚酞、酚红、甲酚酞、甲酚红或百里酚酞递归单元组成的酚醛树脂的组合物用于形成光阻底层膜。底层膜可在碱水中剥离，不会对离子注入的硅基底或二氧化硅基底造成损坏。
• Photoresist underlayer film-forming composition and pattern forming processes
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2813890B1

  公开（公告）日：2018-05-30
• UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20140363955A1

  公开（公告）日：2014-12-11

  In lithography, a composition comprising a novolak resin comprising recurring units derived from a phenolphthalein, Phenol Red, Cresolphthalein, Cresol Red, or Thymolphthalein is used to form a photoresist underlayer film. The underlayer film is strippable in alkaline water, without causing damage to ion-implanted Si substrates or SiO 2 substrates.
• RESIST UNDER LAYER FILM COMPOSITION AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160358777A1

  公开（公告）日：2016-12-08

  The present invention provides a resist under layer film composition containing a novolak resin having a repeating unit shown by the formula (1) and either or both of a novolak resin having a repeating unit shown by the formula (2) and a bisnaphthol derivative shown by the formula (3). There is provided a resist under layer film composition that is excellent in filling property, generates little outgas, and has excellent dry etching resistance and heat resistance.